Magnetoresistive element including a yoke that surrounds a conductor, magnetic memory cell and magnetic memory device including the same

A magnetic memory cell having a pair of magneto-resistive elements each comprising:

• a magnetic yoke disposed annularly, in a partial region along an extension direction of a conductor, in a circumferential direction so as to surround the conductor, and having a pair of open ends facing each other while sandwiching a gap provided in a part in the circumferential direction;
• and
• a stacked body including a magneto-sensitive layer of which magnetization direction changes according to an external magnetic field and a pair of end faces, and
• the stacked body being disposed in the gap so that each of the pair of end faces and each of the pair of open ends face each other,
• wherein the conductor and the magnetic yoke are insulated from each other.

A magnetic memory device comprising:

• a first write line;
• a second write line extended so as to cross the first write line and, in a portion corresponding to an area of intersection with the first write line, extended parallel to the first write line;
• and
• a magnetic memory cell including a pair of magneto-resistive elements,
• wherein each of the pair of magneto-resistive elements has:
• a magnetic yoke disposed annularly, in a partial region along an extension direction of the first and second write lines, in a circumferential direction so as to surround the first and second write lines, and having a pair of open ends facing each other while sandwiching a gap provided in a part in the circumferential direction;
• and
• a stacked body including a magneto-sensitive layer of which magnetization direction changes according to an external magnetic field and a pair of end faces,
• the stacked body is disposed in the gap so that each of the pair of end faces and each of the pair of open ends face each other, and
• the first and second write lines and the magnetic yoke are insulated from each other.