Non-volatile semiconductor memory device

A driving method for a non-volatile semiconductor memory device, the non-volatile semiconductor memory device including a memory cell array;

• and
• the memory cell array being constructed in the way that there are disposed a plurality of memory cell blocks each of that includes a memory cell connected-in-series part wherein a plurality of memory cells are connected in series, each memory cell including a transistor that is formed on a semiconductor substrate, and a variable resistive element that is connected between a source and drain terminals of said transistor and the resistance value of that varies by applying a voltage,
• comprising a first step of, at the time of reading of data, with respect to at least the memory cell block that has been selected, making non-conductive the transistor of any one of the memory cells in the memory cell connected-in-series part to thereby select this memory cell, then applying a prescribed level of reading voltage to both ends of the memory cell connected-in-series part, and thereby executing reading of data with respect to the memory cell that has been selected;
• and
• a second step of, at the time of programming of data, with respect to at least the memory cell block that has been selected, making non-conductive the transistor of any one of the memory cells in the memory cell-connected-in-series part to thereby select this memory cell, then applying a prescribed level of programming voltage to both ends of the memory cell connected-in-series part, and thereby executing programming of data with respect to the memory cell that has been selected.