Semiconductor device
AssigneeSeiko Instruments Inc.
InventorHisashi Hasegawa
Life of this patent
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Abstract
A semiconductor device has a semiconductor support substrate, a buried insulation film disposed on the semiconductor support substrate, and a single-crystal silicon active layer disposed on the buried insulation film. The buried insulation film has portions which have been removed so that remaining portions of the buried insulating film form buried insulating film island regions. The single-crystal silicon active layer has portions which have been removed so that remaining portions of the single-crystal silicon active layer form single-crystal silicon active layer island regions defining single-crystal silicon resistors of a resistance circuit.
Claims13
A semiconductor device formed on an SOI substrate, the semiconductor device comprising:
- a semiconductor support substrate;
- a buried insulation film disposed on the semiconductor support substrate and having portions which have been removed so that remaining portions of the buried insulating film form a plurality of buried insulating film island regions;
- a single-crystal silicon active layer disposed on the buried insulation film and having portions which have been removed so that remaining portions of the single-crystal silicon active layer form a plurality of single-crystal silicon active layer island regions defining single-crystal silicon resistors of a resistance circuit;
- an insulation film disposed on sidewalls of step portions of the single-crystal silicon active layer;
- and a plurality of side spacers made of polycrystalline silicon and disposed on the insulating film, the buried insulating film island regions, and the semiconductor support substrate.
A semiconductor device comprising:
- an SOI substrate having a semiconductor support substrate, a plurality of buried insulation film island regions disposed on the semiconductor support substrate, and a plurality of single-crystal silicon active layer island regions disposed on respective ones of the buried insulation film island regions and forming single-crystal silicon resistors of a resistance circuit;
- an insulation film disposed on step portions of the island-shaped single-crystal silicon active layer island regions;
- and a plurality of polycrystalline silicon spacers disposed on the insulating film, the buried insulation film island regions, and the semiconductor support substrate.
Dependencies are inferred from the claim text.