Barrier regions for image sensors
AssigneeMicron Technology, Inc.
InventorsHoward E. Rhodes, Richard A. Mauritzson, William T. Quinlin
Life of this patent
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Abstract
Embodiments of the invention provide a barrier region for isolating devices of an image sensor. The barrier region comprises a charge accumulation region of a particular conductivity type in a substrate electrically connected to a voltage source terminal. The charge accumulation region is adjacent to at least one pixel cell of a pixel array. The charge accumulation region accumulates charge and prevents charge transference from a pixel cell or peripheral circuitry on one side of the barrier region to a pixel cell on another side of the barrier region.
Claims53
An image sensor comprising:
- a substrate;
- an array of pixel cells formed on the substrate;
- and
- at least one barrier region formed on the substrate adjacent to at least one pixel cell for preventing charge collected by the at least one barrier region from entering the at least one pixel cell, the at least one barrier region comprising a charge accumulation region of a particular conductivity type electrically connected to a voltage source conductor.
An image sensor comprising:
- an array of pixel cells, the array comprising an active array region including a first portion of pixel cells and at least one black region for determining the black level of the array, the at least one black region including a second portion of pixel cells not in the active array region;
- peripheral circuitry adjacent to the array;
- and
- at least one barrier region between the array and the peripheral circuitry and the array and the at least one black region, the at least one barrier region comprising a charge accumulation region of a particular conductivity type electrically connected to a voltage source conductor.
An image sensor comprising:
- an array of pixel cells, the array comprising an active array region including a first portion of pixel cells and at least one black region for determining the black level of the array, the at least one black region including a second portion of pixel cells not in the active array region;
- peripheral circuitry adjacent to the array;
- and
- at least one barrier region, the at least one barrier region being between at least a portion of the pixel cells of the active array region and one or more of the peripheral circuitry and at least a portion of the pixel cells of the at least one black region, the at least one barrier region comprising an n-type charge accumulation region electrically connected to a positive voltage source conductor.
A barrier region for isolating devices of an image sensor, the barrier region comprising:
- a substrate;
- and
- a charge accumulation region on the substrate for accumulating charge and preventing the charge from entering the at least one pixel cell, the charge accumulation region being of a particular conductivity type electrically connected to a voltage source conductor.
A barrier region for isolating devices of an image sensor, the barrier region comprising:
- a substrate;
- and
- an n-type charge accumulation region on the substrate for accumulating charge and preventing the charge from entering the at least one pixel cell, the charge accumulation region being electrically connected to a positive voltage source conductor.
A processor system, comprising:
- (i) a processor;
- and
- (ii) an image sensor coupled to the processor, the image sensor comprising:
- p2 a substrate;
- an array of pixel cells on the substrate;
- at least one barrier region on the substrate adjacent to at least one pixel cell, the at least one barrier region for preventing charge collected by the at least one barrier region from entering the at least one pixel cell and comprising a charge accumulation region of a particular conductivity type electrically connected to a voltage source conductor.
Dependencies are inferred from the claim text.