CdTe-base compound semiconductor single crystal for electro-optic element
AssigneeNikko Materials Co., Ltd.
InventorsRyuichi Hirano, Hideyuki Taniguchi
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Abstract
In case of chlorine doping, a CdTe-base compound semiconductor single crystal used for an electro-optic element has a crystal which is set to chlorine concentration ranging from 0.1 ppmwt to 5.0 ppmwt and has no precipitation having diameter of 2 μm or above. In case of chlorine doping, an indium doping, a CdTe-base compound semiconductor single crystal used for an electro-optic element has a crystal which is obtained from a CdTe material melt, to which indium is doped at concentration ranging from 0.01 ppmwt to 1.0 ppmwt, according to a liquid phase epitaxial growth method and has a solidification ratio of 0.9 or below.
Claims4
A CdTe-base compound semiconductor single crystal for an electro-optic element, comprising a crystal which is set to chlorine concentration ranging from 0.1 ppmwt to 5.0 ppmwt and has no precipitation having a diameter of 2 μm or above.
A CdTe-base compound semiconductor single crystal for an electro-optic element, comprising a crystal which is obtained from a CdTe material melt, into which indium is doped at concentration ranging from 0.01 ppmwt to 1.0 ppmwt, according to a liquid phase epitaxial growth method, the crystal having a solidification ratio of 0.9 or below.
Dependencies are inferred from the claim text.