Pressure detecting device

A pressure detecting device comprising:

• a semiconductor substrate for outputting an electrical signal in accordance with pressure applied in a thickness direction of the semiconductor substrate, wherein the semiconductor substrate has a first electrode on a front surface thereof and a second electrode on a back surface thereof, the electrical signal being output through the first electrode and the second electrode when the pressure is applied;
• a pressure transmitting member that is equipped at the front surface side of the semiconductor substrate and that transmits pressure to the front surface side of the semiconductor substrate, wherein the pressure transmitting member has electrically conductive properties, wherein the first electrode is electrically connected to the pressure transmitting member;
• a housing in which the semiconductor substrate and the pressure transmitting member are accommodated;
• and
• a lead member electrically independent of the housing and accommodated in the housing at the back surface side of the semiconductor substrate, wherein the lead member and the second electrode are electrically connected to each other, wherein;
• the semiconductor substrate is an N-type silicon substrate having a plane direction corresponding to (110)-plane;
• the pressure from the pressure transmitting member is transmitted to a center portion on the front surface of the semiconductor substrate;
• a first N-type diffusion layer is equipped at a peripheral portion on the front surface of the silicon substrate;
• the semiconductor substrate includes a P-type diffusion gage layer that is continuously formed thereon so as to extend from a vicinity of the first N-type diffusion layer through the center portion of the N-type silicon substrate to the other peripheral portion;
• a second N-type diffusion layer is equipped on the back surface of the N-type silicon substrate;
• the P-type diffusion gage layer is electrically connected to the first electrode at the other peripheral portion on the front surface of the N-type silicon substrate;
• the second N-type diffusion layer is electrically connected to the second electrode on the back surface of the N-type silicon substrate;
• a third electrode for electrically connecting the first N-type diffusion layer;
• and
• the P-type diffusion gage layer is equipped at the peripheral portion on the front surface of the N-type silicon substrate.

A pressure detecting device comprising:

• a semiconductor substrate for outputting an electrical signal in accordance with pressure applied in a thickness direction of the semiconductor substrate, wherein the semiconductor substrate has a first electrode on a front surface thereof and a second electrode on a back surface thereof, the electrical signal being output through the first electrode and the second electrode when the pressure is applied;
• a pressure transmitting member that is equipped at the front surface side of the semiconductor substrate and that transmits pressure to the front surface side of the semiconductor substrate, wherein the pressure transmitting member has electrically conductive properties, wherein the first electrode is electrically connected to the pressure transmitting member;
• a housing in which the semiconductor substrate and the pressure transmitting member are accommodated;
• and
• a lead member electrically independent of the housing and accommodated in the housing at the back surface side of the semiconductor substrate, wherein the lead member and the second electrode are electrically connected to each other, and wherein the first electrode is electrically connected to the housing through the pressure transmitting member, whereby the first electrode is allowed to be externally electrically connected.

A pressure detecting device comprising:

• a semiconductor substrate for outputting an electrical signal in accordance with pressure applied in a thickness direction of the semiconductor substrate, wherein the semiconductor substrate has a first electrode on a front surface thereof and a second electrode on a back surface thereof, the electrical signal being output through the first electrode and the second electrode when the pressure is applied;
• a pressure transmitting member that is equipped at the front surface side of the semiconductor substrate and that transmits pressure to the front surface side of the semiconductor substrate, wherein the pressure transmitting member has electrically conductive properties, wherein the first electrode is electrically connected to the pressure transmitting member;
• a housing in which the semiconductor substrate and the pressure transmitting member are accommodated:
• and
• a lead member electrically independent of the housing and accommodated in the housing at the back surface side of the semiconductor substrate, wherein the lead member and the second electrode are electrically connected to each other, and wherein the electrical signal output from the first electrode is externally output through the pressure transmitting member and the housing.

A pressure detecting device comprising:

• a semiconductor substrate for outputting an electrical signal in accordance with pressure applied in a thickness direction of the semiconductor substrate, wherein the semiconductor substrate has a first electrode on a front surface thereof and a second electrode on a back surface thereof, the electrical signal being output through the first electrode and the second electrode when the pressure is applied;
• a pressure transmitting member that is equipped at the front surface side of the semiconductor substrate and that transmits pressure to the front surface side of the semiconductor substrate, wherein the pressure transmitting member has electrically conductive properties, wherein the first electrode is electrically connected to the pressure transmitting member;
• a housing in which the semiconductor substrate and the pressure transmitting member are accommodated;
• and
• a lead member electrically independent of the housing and accommodated in the housing at the back surface side of the semiconductor substrate, wherein:
• the lead member and the second electrode are electrically connected to each other;
• the housing comprises a first portion, a second portion having smaller thermal conductivity than the first portion, and an electrically conductive partition portion through which the first portion and the second portion are separated from each other;
• the semiconductor substrate is accommodated in the first portion of the housing;
• the pressure transmitting member is accommodated in the second portion of the housing so that pressure is transmitted through the partition portion to the front surface of the semiconductor substrate;
• the first electrode of the semiconductor substrate is electrically connected to the partition portion of the housing;
• and
• the lead member and the second electrode of the semiconductor substrate are electrically connected to each other.

A pressure detecting device comprising:

• a semiconductor substrate for outputting an electrical signal in accordance with pressure applied in a direction along which both front and back surfaces of the semiconductor substrate are spaced from each other;
• a pressure transmitting member that is equipped at the front surface side of the semiconductor substrate and transmits pressure to the front surface side of the semiconductor substrate, and;
• a housing in which the semiconductor substrate and the pressure transmitting member are accommodated, wherein the housing comprises a first portion, a second portion having smaller thermal conductivity than the first portion, and an electrically conductive partition portion through which the first portion and the second portion are separated from each other,
• wherein the semiconductor substrate is accommodated in the first portion of the housing,
• wherein the pressure transmitting member is accommodated in the second portion of the housing so that pressure is transmitted through the partition portion to the front surface of the semiconductor substrate,
• wherein the semiconductor substrate has a first electrode on the front surface thereof and a second electrode on the back surface thereof, an electrical signal being output from the first electrode and the second electrode when pressure is applied, wherein the first electrode of the semiconductor substrate is electrically connected to the partition portion of the housing;
• and
• wherein a lead member electrically independent of the housing is accommodated at the back surface side of the semiconductor substrate in the housing, and the lead member and the second electrode of the semiconductor substrate are electrically connected to each other.