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US 7,002,211 B2Granted
Lateral super-junction semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorsYasuhiko Onishi, Tatsuhiko Fujihira, Susumu Iwamoto, Takahiro Sato
Life of this patent
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Abstract
A lateral semiconductor device includes an alternating conductivity type layer for providing a first semiconductor current path in the ON-state of the device and for being depleted in the OFF-state of the device, that has an improved structure for realizing a high breakdown voltage in the curved sections of the alternating conductivity type layer.
Claims15
A lateral semiconductor device comprising:
- a semiconductor chip having two major surfaces;
- two main electrodes on one of the major surfaces of the semiconductor chip;
- one or more alternating conductivity type layers between the main electrodes, each alternating conductivity type layers comprising first semiconductor regions of a first conductivity type and second semiconductor regions of a second conductivity type, the first semiconductor regions and the second semiconductor regions being arranged alternately, the first semiconductor regions providing a current path in the ON-state of the semiconductor device and being depleted in the OFF-state of the semiconductor device, and the second semiconductor regions being depleted in the OFF-state of the semiconductor device;
- and
- lightly doped regions having lower, impurity concentrations than those of the one or more alternating conductivity type layers,
- wherein the one or more alternating conductivity type layers and the lightly doped regions are connected to each other to form a closed loop surrounding one of the main electrodes.
3 more elements
A lateral semiconductor device comprising:
- a semiconductor chip having two major surfaces;
- two main electrodes on one of the major surfaces of the semiconductor chip;
- one or more alternating conductivity type layers between the main electrodes, each of the alternating conductivity type layers comprising first semiconductor regions of a first conductivity type and second semiconductor regions of a second conductivity type, the first semiconductor regions and the second semiconductor regions being arranged alternately, the first semiconductor regions providing a current path in the ON-state of the semiconductor device and being depleted in the OFF-state of the semiconductor device, and the second semiconductor regions being depleted in the OFF-state of the semiconductor device;
- and
- lightly doped regions having substantially low impurity concentrations,
- wherein the one or more alternating conductivity type layers and the lightly doped regions are connected to each other to form a closed loop surrounding one of the main electrodes,
- wherein surface portions of the lightly doped regions are substantially intrinsic.
4 more elements
A lateral semiconductor device comprising:
- a semiconductor chip having two major surfaces;
- two main electrodes on one of the major surfaces of the semiconductor chip;
- one or more alternating conductivity type layers between the main electrodes, each of the alternating conductivity type layers comprising first semiconductor regions of a first conductivity type and second semiconductor regions of a second conductivity type, the first semiconductor regions and the second semiconductor regions being arranged alternately, the first semiconductor regions providing a current path in the ON-state of the semiconductor device and being depleted in the OFF-state of the semiconductor device, and the second semiconductor regions being deleted in the OFF-state of the semiconductor device;
- and
- lightly doped regions having substantially low impurity concentrations,
- wherein the one or more alternating conductivity type layers and the lightly doped regions are connected to each other to form a closed loop surrounding one of the main electrodes,
- wherein the closed loop comprises at least one straight section and at least one curved section, and
- wherein a width of at least a portion of the curved section is larger than a width of the straight section.
5 more elements
A lateral semiconductor device comprising:
- a semiconductor chip having two major surfaces;
- two main electrodes on one of the major surfaces of the semiconductor chip;
- one or more alternating conductivity type layers between the main electrodes, each alternating conductivity type layer comprising first semiconductor regions of a first conductivity type and second semiconductor regions of a second conductivity type, the first semiconductor regions and the second semiconductor regions being arranged alternately, the first semiconductor regions providing a current path in the ON-state of the semiconductor device and being deleted in the OFF-state of the semiconductor device, and the second semiconductor regions being deleted in the OFF-state of the semiconductor device;
- and
- lightly doped regions having substantially low impurity concentrations,
- wherein the one or more alternating conductivity type layers and the lightly doped regions are connected to each other to form a closed loop surrounding one of the main electrodes,
- wherein a width of at least a portion of the lightly doped regions is larger than a width of the alternating conductivity type layer.
4 more elements
Dependencies are inferred from the claim text.