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US 7,002,206 B2Granted
Multi-bit memory unit and fabrication method thereof
AssigneeMacronix International Co., Ltd.
InventorErh-Kun Lai
Life of this patent
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Abstract
A multi-bit memory unit and fabrication method thereof. A semiconductor substrate forming a protruding semiconductor substrate is provided, an ion implantation region is formed on the semiconductor substrate beside the protruding semiconductor substrate, a spacer is formed on a sidewall of the protruding semiconductor substrate, a doped region is formed on the semiconductor substrate, and an ONO layer is conformally formed on the surface of the protruding semiconductor substrate, the spacer, the doped region, and the semiconductor substrate.
Claims13
A multi-bit memory unit, comprising:
- a semiconductor substrate of a first conductive type with a protruding part and a non-protruding part;
- two ion implantation regions of a second conductive type formed in two top corners of the protruding part;
- a spacer of the second conductive type formed on a lower portion of a sidewall of the protruding part;
- a doped region of the second conductive type embedded in the semiconductor substrate beside the spacer;
- and
- an ONO layer conformally formed on the surface of the protruding part, the spacer, the two doped regions, and the semiconductor substrate;
- wherein junctions between the semiconductor substrate of the first conductive type and the two ion implantation regions, the spacer, and the doped region of the second conductive type are formed as memory bits.
4 more elements
Dependencies are inferred from the claim text.