Compound semiconductor device
AssigneeFujitsu Limited
InventorToshihide Kikkawa
Life of this patent
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Abstract
The compound semiconductor device comprises an i-GaN buffer layer 12 formed on an SiC substrate 10; an n-AlGaN electron supplying layer 16 formed on the i-GaN buffer layer 12; an n-GaN cap layer 18 formed on the n-AlGaN electron supplying layer 16; a source electrode 20 and a drain electrode 22 formed on the n-GaN cap layer 18; a gate electrode 26 formed on the n-GaN cap layer 18 between the source electrode 20 and the drain electrode 22; a first protection layer 24 formed on the n-GaN cap layer 18 between the source electrode 20 and the drain electrode 22; and a second protection layer 30 buried in an opening 28 formed in the first protection layer 24 between the gate electrode 26 and the drain electrode 22 down to the n-GaN cap layer 18 and formed of an insulation film different from the first protection layer.
Claims16
A compound semiconductor device comprising:
- a GaN active layer formed on a semiconductor substrate;
- an AlGaN electron supplying layer formed on the GaN active layer;
- a GaN cap layer formed on the AlGaN electron supplying layer;
- a source electrode and a drain electrode formed on the GaN cap layer;
- a gate electrode formed on the GaN cap layer between the source electrode and the drain electrode;
- a first protection layer formed on the GaN cap layer between the source electrode and the drain electrode;
- and
- a second protection layer of an insulation layer different from the first protection layer and buried in an opening formed in the first protection layer between the gate electrode and the drain electrode down to the GaN cap layer.
A compound semiconductor device comprising:
- a GaN active layer formed on a semiconductor substrate;
- an AlGaN electron supplying layer formed on the GaN active layer;
- a GaN cap layer formed on the AlGaN electron supplying layer;
- a source electrode and a drain electrode formed on the GaN cap layer;
- a gate electrode formed on the GaN cap layer between the source electrode and the drain electrode, the gate electrode being in Schottky contact with the GaN cap layer;
- and
- a first protection layer formed on the GaN cap layer between the source electrode and the drain electrode and having the sides in contact with the gate electrode tapered increasingly forward.
A compound semiconductor device comprising:
- a GaN active layer formed on a semiconductor substrate;
- an AlGaN electron supplying layer formed on the GaN active layer;
- a GaN cap layer formed on the AlGaN electron supplying layer and having atomic layer steps formed on the upper surface;
- a source electrode and a drain electrode formed on the GaN cap layer;
- and
- a gate electrode formed on the GaN cap layer between the source electrode and the drain electrode.
Dependencies are inferred from the claim text.