Laser-gated and pumped multi-layer semiconductor power switch with reduced forward losses

Abstract

A laser-activated semiconductor switching device includes a semiconductor assembly including a multi-layer semiconductor structure having a first principal surface, and a laser assembly. The laser assembly includes at least one laser device and is directly connected to said first principal surface. The first principal surface includes a window area from which a metallization layer and an emitter layer of the semiconductor assembly are masked, such that laser light emitted from the laser assembly impinges through the window area directly onto a base layer of said semiconductor assembly to initiate current conduction by said switching device.

Dependencies are inferred from the claim text.