Semiconductor light emitting device integral type semiconductor light emitting unit image display unit and illuminating unit

An integral type light emitting unit including a stack of a plurality of light emitting devices, each of the light emitting devices comprising:

• a semiconductor layer of a first conductive type formed on a principal plane of a substrate, wherein the semiconductor layer includes a raised crystal portion having tilt crystal planes tilted from the principal plane;
• at least an active layer and a semiconductor layer of a second conductive type, wherein the active layer and the semiconductor layer are sequentially stacked at least on the tilt crystal planes of the raised crystal portion;
• a first electrode electrically connected to the semiconductor layer of the first conductive type;
• and
• a second electrode electrically connected to the semiconductor layer of the second conductive type, wherein the second electrode are provided on the semiconductor layer of the second conductive type on the raised crystal portion, and
• wherein a size of the second electrode is in a range of about 50% or less of a size of the raised crystal portion on which the active layer and the semiconductor layer of the second conductive type have been stacked.

An image display unit comprising:

• a semiconductor layer of a first conductive type formed on one principal plane of a substrate, wherein the semiconductor layer includes a raised crystal portion having tilt crystal planes tilted from the principal plane;
• at least an active layer and a semiconductor layer of a second conductive type, wherein the active layer and the semiconductor layer are sequentially stacked at least on the tilt crystal planes of the raised crystal portion;
• a first electrode electrically connected to the semiconductor layer of the first conductive type;
• and
• a second electrode electrically connected to the semiconductor layer of the second conductive type, wherein the second electrode being provided on the semiconductor layer of the second conductive type on the raised crystal portion, and
• wherein a size of the second electrode is in a range of about 50% or less of a size of the raised crystal portion on which the active layer and the semiconductor layer of the second conductive type have been stacked.

An illuminating unit comprising:

• a semiconductor layer of a first conductive type formed on a principal plane of a substrate, wherein the semiconductor layer includes a raised crystal portion having tilt crystal planes tilted from the principal plane;
• at least an active layer and a semiconductor layer of a second conductive type, wherein the active layer and the semiconductor layer same sequentially stacked at least on the tilt crystal planes of the raised crystal portion;
• a first electrode electrically connected to the semiconductor layer of the first conductive type;
• and
• a second electrode electrically connected to the semiconductor layer of the second conductive type, wherein the second electrode is provided on the semiconductor layer of the second conductive type on the raised crystal portion, and
• wherein a size of the second electrode is in a range of about 50% or less of a size of the raised crystal portion on which the active layer and the semiconductor layer of the second conductive type have been stacked.