Bonding pad for gallium nitride-based light-emitting device

A semiconductor device comprising:

• a substrate having a first major surface;
• a semiconductor device structure over the first major surface of the substrate, the device structure comprising an n-type gallium nitride-based semiconductor layer, and a p-type gallium nitride-based semiconductor layer over the n-type semiconductor layer;
• a first electrode in electrical contact with the n-type semiconductor layer;
• a second electrode in contact with the p-type semiconductor layer;
• and
• a bonding pad in contact with the second electrode, wherein the first electrode and the bonding pad are formed of substantially the same metallic material that includes aluminum and wherein the metallic material includes a first metal layer of a metal selected from the group consisting of palladium, platinum, nickel and combinations thereof in contact with the second electrode, and a layer of aluminum over the first metal layer.

A gallium nitride-based semiconductor device comprising:

• a first electrode in electrical contact with the n-type gallium nitride-based semiconductor layer;
• a second electrode in contact with the p-type gallium nitride-based semiconductor layer;
• and
• a bonding pad in contact with the second electrode, the bonding pad comprising a metallic material that include a first metal layer of a metal selected from the group consisting of palladium, platinum, nickel and combinations thereof in contact with the second electrode, and a layer of aluminum over the first metal layer.