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US 7,002,176 B2Granted
Vertical organic transistor
AssigneesRicoh Company, Ltd., Kazuhiro Kudoh
InventorsHiroyuki Iechi, Kazuhiro Kudoh
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Abstract
A vertical organic transistor comprises a substrate, a first electrode positioned over the substrate, a first semiconductor layer formed over the first electrode, a second electrode formed on the first semiconductor layer and shaped into a prescribed pattern, a second semiconductor layer formed over the second electrode and the first semiconductor layer, and a third electrode formed over the second semiconductor layer. The first semiconductor layer and the second semiconductor layer are made of different semiconductor materials.
Claims23
A vertical organic transistor comprising:
- a substrate;
- a first electrode positioned over the substrate;
- a first semiconductor layer formed over the first electrode;
- a second electrode formed on the first semiconductor layer and shaped into a prescribed pattern;
- a second semiconductor layer formed over the second electrode and the first semiconductor layer, the second semiconductor layer being made of a different material from that of the first semiconductor layer;
- and
- a third electrode formed over the second semiconductor layer,
- wherein at least one of the first and second semiconductor layers are made of an organic semiconductor material, and
- one of the first and second semiconductor layers is of a first conductivity type, while the other is of a second conductivity type.
6 more elements
A vertical organic transistor comprising:
- a substrate;
- a first electrode positioned over the substrate;
- a first semiconductor layer formed over the first electrode;
- a second electrode formed on the first semiconductor layer and shaped into a prescribed pattern;
- a second semiconductor layer formed over the second electrode and the first semiconductor layer, the second semiconductor layer being made of a different material from that of the first semiconductor layer;
- and
- a third electrode formed over the second semiconductor layer,
- wherein one of the first and second semiconductor layers is made of an organic semiconductor material, while the other is made of an inorganic semiconductor material.
5 more elements
A vertical organic transistor comprising:
- a substrate;
- a first electrode positioned over the substrate;
- a first semiconductor layer formed over the first electrode;
- a second electrode formed on the first semiconductor layer and shaped into a prescribed pattern;
- a second semiconductor layer formed over the second electrode and the first semiconductor layer, the second semiconductor layer being made of a different material from that of the first semiconductor layer;
- and
- a third electrode formed over the second semiconductor layer,
- wherein at least one of the first and second semiconductor layers are made of an organic semiconductor material,
- one of the first and second semiconductor layers is of a first conductivity type, while the other is of a second conductivity type, and
- the second electrode and the first semiconductor layer make Schottky contact at the interface between them.
7 more elements
A vertical organic transistor comprising:
- a substrate;
- a first electrode positioned over the substrate;
- a first semiconductor layer formed over the first electrode;
- a second electrode formed on the first semiconductor layer and shaped into a prescribed pattern;
- a second semiconductor layer formed over the second electrode and the first semiconductor layer, the second semiconductor layer being made of a different material from that of the first semiconductor layer;
- and
- a third electrode formed over the second semiconductor layer,
- wherein at least one of the first and second semiconductor layers are made of an organic semiconductor material,
- one of the first and second semiconductor layers is of a first conductivity type, while the other is of a second conductivity type, and
- the second electrode and the second semiconductor layer make Schottky contact at the interface between them.
7 more elements
A vertical organic transistor comprising:
- a substrate;
- a first electrode positioned over the substrate;
- a first semiconductor layer formed over the first electrode;
- a second electrode formed on the first semiconductor layer and shaped into a prescribed pattern;
- a second semiconductor layer formed over the second electrode and the first semiconductor layer, the second semiconductor layer being made of a different material from that of the first semiconductor layer;
- and
- a third electrode formed over the second semiconductor layer,
- wherein one of the first and second semiconductor layers is of a first conductivity type, while the other is of a second conductivity type,
- wherein at least one of the first and second semiconductor layers are made of an organic semiconductor material, and
- wherein the organic semiconductor material includes:
- (1) at least one kind of linearly condensed polycyclic aromatic compound (acene compound) selected from the group consisting of naphthalene, anthracene, tetracene, pentacene, hexacene, and derivatives thereof;
- (2) at least one kind of pigment selected from the group consisting of copper-phthalocyanine(CuPc)-based compounds, azo compounds, perylene-based compounds, and derivatives thereof;
- (3) at least one kind of low-molecular compound selected from the group consisting of hydrazone compounds, triphenyl methane-based compounds, diphenylmethane-based compounds, stilbene-based compounds, arylvinyl compounds, pyrazoline-based compounds, triphenyl amine derivatives (TPD), In arylamine compounds, low-molecular weight arylamine derivatives (α-NPD), 2,2′,7,7′-tetrakis(diphenylamino)-9,9′-spirobifluorene (Spiro-TAD), N,N′-di(1-naphthyl)-N,N′-diphenyl-4,4′-diamonobiphenyl (Spiro-NPB), 4,4′,4″-tris[N-3-methylphenyl-N-phenylamino]-triphenylamine (mMTDATA), 2,2′,7,7′-tetrakis(2,2-diphenylvinyl)-9,9-spirobifluorene (Spiro-DPVBi), 4,4′-bis(2,2-diphenylvinyl)biphenyl (DPVBi), (8-quininolinolato)aluminum (Alq), tris(8-quinolinolato)aluminum (Alq3), tris(4-methyl-8quinolinolato)aluminum (Almq3), and derivatives thereof;
- and (4) at least one kind of polymer compound selected from the group consisting of poly(p-phenylenevinylene) (PPV), polymers containing biphenyl groups, polymers having dialkoxy groups, alkoxyphenyl-PPV, phenyl-PPV, phenyl/dialkoxy-PPV copolymer, poly(2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV), poly(ethylenedioxythiophene) (PEDOT), poly(styrenesulfonic acid) (PSS), poly(aniline) (PANI), poly(N-vinylcarbazole), halogenated poly(N-vinylcarbazole), poly(vinylpyrene), poly(vinylanthracene), pyrene-folmaldehyde resin, ethylcarbazole-folmaldehyde resin, and modifications thereof.
11 more elements
Dependencies are inferred from the claim text.