Flash memory device and fabrication process thereof, method of forming a dielectric film
AssigneeTadahiro Ohmi
InventorsTadahiro Ohmi, Shigetoshi Sugawa
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Abstract
A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidation of a polysilicon electrode surface. It is also disclosed the method of forming an oxide film and a nitride film on a polysilicon film according to such a plasma processing.
Claims10
A method of fabricating a flash memory device, wherein the flash memory device comprising a silicon substrate, a first electrode formed on said silicon substrate with an insulation film interposed therebetween, and a second electrode formed on the first electrode with an inter-electrode insulation film interposed therebetween, the inter-electrode insulation film comprising at least one silicon oxide film and at least one silicon nitride film, the method comprising:
- forming the least one silicon nitride film of the inter-electrode insulation film, wherein forming the at least one silicon nitride film comprises:
- maintaining the temperature of the silicon substrate at a temperature exceeding 400° C;
- introducing a mixture of a gas into a processing chamber, wherein the mixture of gas containing one of NH3 or nitrogen and hydrogen, the mixture of gas also contains Ar gas or Kr gas;
- making hydrogen nitride radicals NH* by exciting plasma in the mixture of gas;
- and
- forming the at least one silicon nitride film using the hydrogen nitride radicals NH* .
Dependencies are inferred from the claim text.