Hydrogen-based phosphosilicate glass process for gap fill of high aspect ratio structures
AssigneeNovellus Systems, Inc.
InventorsGeorge D. Papasouliotis, Md Sazzadur Rahman, Pin Sheng Sun, Karen Prichard, Lauren Hall, Vikram Singh
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Abstract
Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.13 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen and a phosphorus dopant precursor as process gasses in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.
Claims54
A method of filling gaps on a semiconductor substrate, the method comprising
- providing a substrate in a process chamber of a high density plasma chemical vapor deposition reactor;
- introducing a process gas comprising H2 and a phosphorus dopant precursor into the process chamber, wherein the flow rate ratio of H2 to all other process gas constituents is in excess of 1:1;
- and
- applying a bias to the substrate, to thereby grow a phosphorus-doped dielectric film via high density plasma chemical vapor deposition on the semiconductor substrate, wherein the dielectric film fills gaps with a width of less than about 1.5 micrometer.
A method of filling gaps on a semiconductor substrate, the method comprising
- providing a substrate in a process chamber of a high density plasma chemical vapor deposition reactor;
- introducing a process gas comprising H2 and a phosphorous dopant precursor into the process chamber, wherein the flow rate ratio of H2 to all other process gas constituents is in excess of 1:1, wherein the process gas is substantially free of noble gas;
- and
- applying a bias to the substrate, to thereby grow a phosphorous-doped dielectric film via high density plasma chemical vapor deposition on the semiconductor substrate, wherein the dielectric film fills gaps with a width of less than about 1.5 micrometer.
Dependencies are inferred from the claim text.