Method of depositing dielectric films
AssigneeApplied Materials, Inc.
InventorsSrinivas D Nemani, Li-Qun Xia, Dian Sugiarto, Ellie Yieh, Ping Xu, Francimar Campana-Schmitt, Jia Lee
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Abstract
A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.
Claims32
A method of forming a device, comprising:
- forming a doped silicon carbide layer on a substrate in a deposition chamber, wherein the doped silicon carbide layer is formed by reacting a gas mixture comprising an organosilane compound and a dopant selected from the group of ammonia (NH3), methane (CH4), silane (SiH4), ethylene (C2H4), acetylene (C2H2), and combinations thereof, and wherein the doped silicon carbide layer has a compressibility that varies as a function of the amount of dopant in the gas mixture;
- treating the doped silicon carbide layer by exposing the doped silicon carbide layer deposited on the substrate to a plasma;
- and
- defining a pattern in at least one region of the doped silicon carbide layer.
A method of fabricating an interconnect structure, comprising:
- providing a substrate having a metal layer thereon;
- forming a doped silicon carbide barrier layer on the metal layer, wherein the doped silicon carbide barrier layer is formed by reacting a first gas mixture comprising a organosilane compound and a dopant selected from the group of ammonia (NH3), methane (CH4), silane (SiH4), ethylene (C2H4), acetylene (C2H2), and combinations thereof, and wherein the doped silicon carbide barrier layer has a compressibility that varies as a function of the amount of dopant in the gas mixture;
- forming a first dielectric layer on the doped silicon carbide barrier layer;
- forming a doped silicon carbide hard mask on the first dielectric layer;
- wherein the doped silicon carbide hard mask is formed by reacting a second gas mixture comprising a organosilane compound and a dopant selected from the group of ammonia (NH3), methane (CH4), silane (SiH4), ethylene (C2H4), acetylene (C2H2), and combinations thereof, and wherein the doped silicon carbide hardmask has a compressibility that varies as a function of the amount of dopant in the gas mixture;
- patterning the doped silicon carbide hard mask to define vias therethrough;
- forming a second dielectric layer on the patterned doped silicon carbide hard mask;
- patterning the second dielectric layer to define interconnects therethrough, wherein the interconnects are positioned over the vias defined in the doped silicon carbide hard mask;
- transferring the via pattern through the first dielectric layer using the doped silicon carbide hard mask;
- and
- filling the vias and interconnects with a conductive material.
A method of forming a device, comprising:
- forming a doped silicon carbide layer on a substrate in a deposition chamber, wherein the doped silicon carbide layer is formed by reacting a gas mixture comprising an organosilane compound and a dopant selected from the group of ammonia (NH3), methane (CH4), silane (SiH4), ethylene (C2H4), acetylene (C2H2), and combinations thereof, and wherein the doped silicon carbide layer has a compressibility that varies as a function of the amount of dopant in the gas mixture;
- forming a silicon carbide cap layer on the doped silicon carbide layer;
- and
- defining a pattern in at least one region of the silicon carbide cap layer and the doped silicon carbide layer.
Dependencies are inferred from the claim text.