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AssigneeInternational Business Machines Corporation
InventorsAshima B. Chakravarti, Shreesh Narasimha, Victor Chan, Judson Holt, Satya N. Chakravarti
Estimating the term…
Stress level of a nitride film is adjusted as a function of two or more of the following: identity of a starting material precursor used to make the nitride film; identity of a nitrogen-containing precursor with which is treated the starting material precursor; ratio of the starting material precursor to the nitrogen-containing precursor; a set of CVD conditions under which the film is grown; and/or a thickness to which the film is grown. A rapid thermal chemical vapor deposition (RTCVD) film produced by reacting a compound containing silicon, nitrogen and carbon (such as bis-tertiary butyl amino silane (BTBAS)) with NH3 can provide advantageous properties, such as high stress and excellent performance in an etch-stop application. An ammonia-treated BTBAS film is particularly excellent in providing a high-stress property, and further having maintainability of that high-stress property over repeated annealing.
A method of producing a high-stress nitride film, comprising:
A process of producing a nitride film, comprising:
A method of semiconductor wafer manufacture, comprising:
A method of adjusting a stress level of a nitride film, comprising adjusting at least two selected from the group consisting of:
Dependencies are inferred from the claim text.