Methods of forming metal lines in semiconductor devices
AssigneeDongbuAnam Semiconductor Inc.
InventorTae-Hee Park
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Abstract
Methods for forming metal lines in semiconductor devices are disclosed. One example method may include forming a lower adhesive layer on a semiconductor substrate; forming a metal layer including aluminum on the lower adhesive layer; forming an anti-reflection layer on the metal layer; forming a photomask on the anti-reflection layer; performing an initial etching, a main etching and an over-etching for the anti-reflection layer, the metal layer and the lower adhesive layer, respectively, in a region which is not protected by the photomask, using C3F8 as a main etching gas; and removing the photomask residual on the anti-reflection layer.
Claims13
A method for forming a metal line in a semiconductor device, the method comprising:
- forming a lower adhesive layer on a semiconductor substrate;
- forming a metal layer including aluminum on the lower adhesive layer;
- forming an anti-reflection layer on the metal layer;
- forming a photomask on the anti-reflection layer;
- performing an initial etching, a main etching and an over-etching for the anti-reflection layer, the metal layer and the lower adhesive layer, respectively, in a region which is not protected by the photomask, using C3F8 as a main etching gas, wherein the main etching of the metal layer is performed using a reactive gas including C3F8,NF3 and N2;
- and
- removing the photomask residual on the anti-reflection layer.
Dependencies are inferred from the claim text.