Production method of semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsShuji Hirao, Takeshi Harada, Kazushi Nii, Takenobu Kishida, Atsushi Ikeda, Kazunori Tsuji
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Abstract
After a thin first conductive film is formed on a barrier film having a crystal structure, a second conductive film is formed on the first conductive film. Thereafter, the first conductive film and the second conductive film are heated such that the first and second conductive films are integrated to form a third conductive film.
Claims35
A method for producing a semiconductor device, comprising the steps of:
- forming a first conductive film as a seed layer having non epitaxial crystal structure on a barrier film having a crystal structure;
- forming a second conductive film which is made of the same material as the first conductive film on the first conductive film;
- and
- heating the first conductive film and the second conductive film such that the first and second conductive films are integrated to form a third conductive film.
A method for producing a semiconductor device, comprising the steps of:
- forming a first conductive film as a seed layer having non epitaxial crystal structure on a barrier film having a crystal structure;
- forming a second conductive film which is made of the same material as the first conductive film on the first conductive film;
- and
- heating the first conductive film and the second conductive film such that the first and second conductive films are integrated to form a third conductive film,
- wherein the thickness of the first conductive film is set to be equal to or smaller than a ¼ of the total thickness of the first conductive film and the second conductive film.
A method for producing a semiconductor device, comprising the steps of:
- forming a first conductive film as a seed layer having non epitaxial crystal structure on a barrier film having a crystal structure;
- forming a second conductive film which is made of the same material as the first conductive film on the first conductive film;
- and
- heating the first conductive film and the second conductive film such that the first and second conductive films are integrated to form a third conductive film,
- wherein the thickness of the first conductive film is set to be equal to or smaller than 120 nm.
A method for producing a semiconductor device, comprising the steps of:
- forming a first conductive film as a seed layer having a relatively amorphous structure on a barrier film having a crystal structure;
- forming a second conductive film which is made of the same material as the first conductive film on the first conductive film;
- and
- heating the first conductive film and the second conductive film such that the first and second conductive films are integrated to form a third conductive film.
Dependencies are inferred from the claim text.