Method of wet etching an inorganic antireflection layer
AssigneeKoninklijke Philips Electronics N.V.
InventorsDirk Maarten Knotter, Johannes Van Wingerden, Madelon Gertruda Josephina Rovers
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Abstract
The invention relates to a method of manufacturing a semiconductor device, comprising the provision of a substrate with a layer of silicon thereon, an inorganic anti-reflective layer applied to the layer of silicon, and a resist mask applied to the inorganic anti-reflective layer, which method comprises the steps of: patterning the inorganic anti-reflective layer by means of the resist mask, patterning the layer of silicon, removing the resist mask, and removing the inorganic anti-reflective layer by means of etching with an aqueous solution comprising hydrofluoric acid in a low concentration, which aqueous solution is applied at a high temperature.
Claims18
A method of manufacturing a semiconductor device, comprising the provision of a substrate with a layer of silicon thereon, an inorganic anti-reflective layer applied to the layer of silicon, and a resist mask applied to the inorganic anti-reflective layer, which method comprises the steps of:
- patterning the inorganic anti-reflective layer by means of the resist mask,
- patterning the layer of silicon,
- removing the resist mask, and
- removing the inorganic anti-reflective layer by means of etching with an aqueous solution comprising hydrofluoric acid:
- wherein the aqueous solution is treated so as to keep the layer of silicon in a non-oxidized state during etching the inorganic anti-reflective layer.
Dependencies are inferred from the claim text.