Wafer with a relaxed useful layer and method of forming the wafer

A method of preparing crystalline wafer, comprising:

• providing a first composite structure comprising a support substrate and a first epitaxial layer that is in a strained state and is associated with one side of the support substrate;
• relaxing the strained state of the first epitaxial layer of the composite structure to an at least partially relaxed state by providing dislocations in a dislocation layer between the first epitaxial layer and the support substrate in a configuration sufficient to relax the first epitaxial layer;
• creating a region of weakness substantially between the first epitaxial layer and the support substrate by implanting atomic species between the first epitaxial layer and the support substrate;
• associating a receiving substrate with the first composite structure with the side of the support that includes the first epitaxial layer;
• and
• obtaining a production wafer and a donor wafer by splitting the first composite structure at a region of weakness located therein;
• wherein the strained state of the first epitaxial layer is relaxed prior to associating the receiving substrate with the structure by bonding to the relaxed first epitaxial layer;
• and the implantation of the atomic species both creates the region of weakness and provides dislocations between the first epitaxial layer and the support substrate for relaxing the strained state of the epitaxial layer.