Gallium nitride vertical light emitting diode structure and method of separating a substrate and a thin film in the structure
AssigneeSupernova Optoelectronics Corp.
InventorsSchang-Jing Hon, Mu-Jen Lai
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Abstract
A gallium nitride (GaN) vertical light emitting diode (LED) structure and a method of separating a substrate and a thin film thereon in the GaN vertical LED are described. The structure has a metal reflective layer for reflecting light. The method provides a laser array over the substrate. A laser light emitted by the laser array is least partially be transparent to the substrate and its energy may be absorbed by the thin film. The thin film is irradiated through the substrate. The substrate is then separated from the thin film.
Claims7
A method of separating a sapphire substrate from a thin film overlaying a top side of said sapphire substrate, comprising the steps of:
- providing a laser array, said laser array emitting a plurality of laser light beams toward a back side of said sapphire substrate for absorption by said thin film;
- irradiating said thin film with said plurality of light beams from said laser array through said sapphire substrate;
- and
- separating said sapphire substrate and said thin film.
A method of separating a substrate from a thin film overlaying a top side of said substrate, comprising the steps of:
- providing a laser array, said laser array emitting a plurality of laser light beams toward a back side of said substrate and said substrate being substantially transparent to said plurality of laser light beams for absorption of said plurality of laser light beams by said thin film;
- irradiating said thin film with said laser array through said substrate;
- and
- separating said substrate and said thin film.
Dependencies are inferred from the claim text.