Semiconductor device formed on insulating layer and method of manufacturing the same

A method of manufacturing a semiconductor device comprising the steps of:

• forming a nitride film at a predetermined region on a main surface of a semiconductor layer located on an insulating layer;
• forming a side wall insulating film in contact with a side surface of said nitride film;
• effecting etching on said semiconductor layer to remove a predetermined thickness using said nitride film and said side wall insulating film as a mask;
• and
• selectively oxidizing said semiconductor layer to form an oxide film using said nitride film as a mask.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a nitride film at a predetermined region on a main surface of a semiconductor layerlocated on an insulating layer;
• selectively oxidizing said semiconductor layer to torn an oxide film using said nitride film as a mask;
• etching and removing at least a region of said nitride film near its side surface;
• and
• effecting anisotropic etching on said oxide film and said semiconductor layer using said etched nitride film as a mask.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a nitride film at a predetermined region on a main surface of a first semiconductor layer located on an insulating layer;
• effecting isotropic etching on said first semiconductor layer using said nitride film as a mask for removing a portion of said first semiconductor layer not located under said nitride film and a portion of said first semiconductor layer located under a side surface of said nitride film;
• forming a second semiconductor layer covering said nitride film, said first semiconductor layer and said insulating layer by a sputtering method;
• and
• oxidizing said second semiconductor layer.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a resist film at a predetermined region an a main surface of a first semiconductor layer located on an insulating layer;
• effecting etching on said first semiconductor layer to pattern said first semiconductor layer using said resist film as a mask;
• ion-implanting impurity into a side surface of said first semiconductor layer using said resist film as a mash;
• forming a second semiconductor layer covering said first semiconductor layer and said insulating layer by a sputtering method after removing said resist film;
• and
• oxidizing said second semiconductor layer.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a nitride film at a predetermined region on a main surface of a first semiconductor layer located on an insulating layer;
• forming a side wall oxide film in contact with a side surface of said nitride film;
• etching said first semiconductor layer pattern said first semiconductor layer using said nitride film and said side wall oxide film as a mask;
• removing said side wall oxide film;
• implanting inactive ions into said first semiconductor layer using said nitride film as a mask, and subsequently performing heat treatment;
• oxidizing said first semiconductor layer to form an oxide film using said nitride film as a mask;
• and
• implanting impurity ions into the side surface of said first semiconductor layer through said oxide film.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a nitride film on a main surface of a first semiconductor layer located at a predetermined region on an insulating layer;
• forming a resist film at a predetermined region on a main surface said nitride film;
• implanting inactive ions and impurity ions into a portion near a side surface of said first semiconductor layer using said resist film as a mask;
• forming a second semiconductor layer covering said nitride film, said first semiconductor layer and said insulating layer;
• and
• oxidizing said second semiconductor layer and a region near the side surface of said first semiconductor layer.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a nitride film at a predetermined region on a main surface of a semiconductor layer located on an insulating layer;
• selectively oxidizing said semiconductor layer over a predetermined thickness to form a first oxide film using said nitride film as a mask;
• removing said first oxide film;
• oxidizing said semiconductor layer a remaining thickness to form a second oxide film using said nitride film as a mask.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a nitride film at a predetermined region on a main surface of a semiconductor layer located on an insulating layer;
• etching said semiconductor layer to pattern said semiconductor layer using said nitride film as a mask;
• oxidizing a side portion of said semiconductor layer using said nitride film as a mask;
• removing at least a portion of the nitride film located near the side surface of said semiconductor layer;
• and
• implanting impurity ions into a portion near the side surface of said semiconductor layer using said nitride film as a mask.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a nitride film at a predetermined region on a main surface of a semiconductor layer located on an insulating layer;
• selectively oxidizing said semiconductor layer to form a first oxide film using said nitride film as a mask;
• removing said first oxide film by etching;
• and
• oxidizing a side portion of said semiconductor layer to form a second oxide film using said nitride film as a mask.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a nitride film at a predetermined region on a main surface of a semiconductor layer located on an insulating layer;
• selectively oxidizing said semiconductor layer over a predetermined thickness to form a first oxide film using said nitride film as a mask;
• etching and removing said first oxide film using said nitride film as a mask;
• forming a side wall nitride film in contact with a side surface of said nitride film;
• anisotropically etching and removing a predetermined portion of said semiconductor layer using said side wall nitride film as a mask;
• and
• oxidizing a side surface of said semiconductor layer to form a second oxide film.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer having a main surface on an insulating layer, and then forming an oxide film on the main surface of said semiconductor layer;
• forming a nitride filmon said oxide film;
• forming on said oxide film a side wall nitride film in contact with a side surface at said nitride film;
• etching said semiconductor layer into an isolated form using said nitride film and said side wall nitride film as a ask;
• oxidizing a side surface of said semiconductor layer to form a side wall oxide film using said nitride film and said side wall nitride film as a mask;
• and
• removing said nitride film and said side wall nitride film with thermo-phosphoric acid.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a second semiconductor layer on a main surface of a first semiconductor layer located located on an insulating layer;
• forming a nitride film at a predetermined region on a main surface of said second semiconductor layer;
• selectively oxidizing said second semiconductor layer to give a trapezoidal section to said second semiconductor layer using said nitride film as a mask;
• and
• anisotropically etching said second and first semiconductor layers to remove said second semiconductor layer and give a trapezoidal section to said first semiconductor layer.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a plurality of isolated semiconductor layers on an insulating layer with a predetermined space between each other;
• forming a nitride film to cover an upper surface of said insulating layer located at an isolation region between said adjacent semiconductor layers as well as a side surface of said semiconductor layer;
• and
• oxidizing an upper side portion of said semiconductor layer using said nitride film as a mask.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a plurality of isolated semiconductor layers on a main surface of an insulating layer with a predetermined space between each other;
• forming a concavities at a region of said insulating layer located between said isolated semiconductor layers and near a lower side portion of said semiconductor layer;
• forming a side wall insulating film being in contact with the side surface of said semiconductor layer and filling said concavity at said lower side portion of said semiconductor layer;
• and
• forming a polycrystalline silicon layer filling said concavity between said adjacent semiconductor layers.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer on a first insulating layer;
• forming a second insulating layer at a region on a main surface of said semiconductor layer corresponding to an isolation region;
• forming an epitaxial growth layer having a trapezoidal section by epitaxial growth from an exposed surface of said semiconductor layer using said second insulating layer as a mask;
• and
• effecting anisotropic etching on said epitaxial growth layer and said semiconductor layer to form a plurality of isolated semiconductor layers each having a trapezoidal section after removing said second insulating layer.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer at a predetermined region on a main surface of an insulating layer;
• isotropically etching said insulating layer, using said semiconductor layer as a mask, to remove a portion of said insulating layer in contact with a lower surface of said semiconductor layer by a predetermined amount;
• and
• oxidizing said semiconductor layer to form an oxide film at least between said lower surface of said semiconductor layer and said insulating layer.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a nitride film at a predetermined region on a main surface of a semiconductor layer located at a predetermined region on an insulating layer;
• selectively oxidizing said semiconductor layer to form an element isolating oxide film using said nitride film as a mask;
• and
• ion-implanting impurity into a side end of said semiconductor layer through said element isolating oxide film using said nitride film as a mask.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a nitride film at a predetermined region on a main surface of a semiconductor layer located on an insulating layer;
• etching said semiconductor layer to pattern said semiconductor layer into a plurality of isolated forms using said nitride film as a mask;
• oxidizing a side surface of said semiconductor layer to form a side wall oxide film using said nitride film as a mask;
• and
• ion-implanting impurity into a portion near a side surface or said semiconductor layer through said side wall oxide film using said nitride film as a mask.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer on an insulating layer;
• patterning said semiconductor layer and said insulating layer into a predetermined form;
• forming a nitride film in contact with a side surface of said insulating layer and a lower portion of a side surface of said semiconductor layer;
• and
• oxidizing the side surface of said semiconductor layer using said nitride film as a mask.

A method of manufacturing a semiconductor device comprising the steps of:

• forming successively a semiconductor layer, a first nitride film and an etching stepper layer on an insulating layer;
• etching said etching stopper layer, said first nitride film, said semiconductor layer and said insulating layer to give predetermined forms to the same;
• forming a second nitride film covering said etching stopper layer, said first nitride film, said semiconductor layer and said insulating layer;
• and
• etching said second nitride film to leave a portion of said second nitride film being in contact with a side surface of said insulating layer and a lower portion of a side surface of said semiconductor layer.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer on an insulating layer;
• patterning said insulating layer and said semiconductor layer to form a first insulating layer and a first semiconductor layer located thereon as well as a second insulating layer spaced from said first insulating layer by a predetermined distance and a second semiconductor layer located thereon;
• forming a nitride film to fill a space between, on one hand, said first insulating layer and said first semiconductor layer and, on the other hand, said second insulating layer and said second semiconductor layer;
• and
• etching back said nitride film to leave a portion of said nitride film being in contact with side surfaces of said first and second insulating layers and lower portions of side surfaces of said first and second semiconductor layers.