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US 7,001,821 B2Granted
Method of forming and using a hardmask for forming ferroelectric capacitors in a semiconductor device
AssigneeTexas Instruments Incorporated
InventorsSanjeev Aggarwal, Kelly J. Taylor, Theodore S. Moise
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Abstract
Hardmasks and fabrication methods are presented for producing ferroelectric capacitors in a semiconductor device, wherein a hardmask comprising aluminum oxide or strontium tantalum oxide is formed above an upper capacitor electrode material, and capacitor electrode and ferroelectric layers are etched to define a ferroelectric capacitor stack.
Claims7
A method of fabricating a ferroelectric capacitor in a semiconductor device, the method comprising:
- forming a lower electrode material above a first contact;
- forming a ferroelectric material above the lower electrode material;
- forming an upper electrode material above the ferroelectric material;
- forming a strontium tantalum oxide hardmask above the upper electrode material;
- and
- etching portions of the upper electrode material, the ferroelectric material, and the lower electrode material using the strontium tantalum oxide hardmask to form a ferroelectric capacitor.
3 more elements
Dependencies are inferred from the claim text.