Method for fabricating a semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsSang-Won Yeo, Jeong-Sic Jeon, Chang-Jin Kang, Chang-Won Lee
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Abstract
A method for fabricating a semiconductor device, including forming a gate insulating film and a gate electrode film on a semiconductor substrate, and patterning the gate electrode film to form a gate electrode. A portion of the gate insulating film is removed to form an undercut region beneath the gate electrode. A buffer silicon film is formed over an entire surface of the resultant substrate to cover the gate electrode and to fill the undercut region. The buffer silicon film is selectively oxidized to form a buffer silicon oxide film.
Claims20
A method for fabricating a semiconductor device, the method comprising the steps of:
- forming a gate insulating film and a gate electrode film on a semiconductor substrate;
- patterning the gate electrode film to form a gate electrode;
- removing a portion of the gate insulating film to form an undercut region beneath the gate electrode;
- forming a buffer silicon film on an entire surface of the resultant substrate, the buffer silicon film covering the gate electrode and filling the undercut region;
- and
- selectively oxidizing the buffer silicon film to form a buffer silicon oxide film.
A method for fabricating a semiconductor device, comprising the steps of:
- forming a gate insulating film and a gate electrode on a semiconductor substrate;
- etching and removing the gate insulating film exposed at both sides of the gate electrode and at an edge portion of the gate insulating film beneath the gate electrode, to thereby form an undercut region beneath the gate electrode;
- forming a buffer silicon film on an entire surface of the resultant substrate;
- and
- selectively oxidizing the buffer silicon film to form a buffer silicon oxide film.
A method for fabricating a semiconductor device, comprising the steps of:
- forming a gate insulating film, a silicon film, a barrier metal film, a tungsten film and a capping nitride film on a semiconductor substrate;
- patterning the capping nitride film, the tungsten film, the barrier metal film and the silicon film to form a gate electrode;
- wet-etching and removing the gate insulating film exposed at both sides of the gate electrode, and at an edge portion of the gate insulating film beneath the gate electrode, to form an undercut region beneath the gate electrode;
- forming a buffer silicon film on an entire surface of the resultant substrate in which the undercut region is formed;
- selectively oxidizing the buffer silicon film to form a buffer silicon oxide film;
- performing a lightly-doped implantation into the buffer silicon oxide film to form a lightly-doped impurity region in the semiconductor substrate at both sides of the buffer silicon oxide film formed on sidewalls of the gate electrode;
- forming a spacer nitride film on the buffer silicon oxide film;
- etching-back the spacer nitride film to form a nitride spacer;
- and
- performing a heavily-doped implanting into the resultant substrate to form a heavily-doped impurity region next to the lightly-doped impurity region, in the semiconductor substrate outside the nitride spacer.
A semiconductor device, comprising:
- a semiconductor substrate;
- a gate electrode formed over the substrate, the gate electrode including a gate insulating film, a portion of the gate insulating film being removed to form an undercut region beneath the gate electrode;
- and
- a buffer silicon oxide film formed over sidewalls of the gate electrode and within the undercut region.
Dependencies are inferred from the claim text.