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US 7,001,813 B2Granted
Layers of group III-nitride semiconductor made by processes with multi-step epitaxial growths
AssigneeLucent Technologies Inc.
InventorsMichael James Manfra, Nils Guenter Weimann
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Abstract
One method includes epitaxially growing a layer of group III-nitride semiconductor under growth conditions that cause a growth surface to be rough. The method also includes performing an epitaxial growth of a second layer of group III-nitride semiconductor on the first layer under growth conditions that cause the growth surface to become smooth. The two-step growth produces a lower density of threading defects.
Claims12
A method, comprising:
- epitaxially growing a first layer of group III-nitride semiconductor under growth conditions that cause a growth surface to be rough;
- and
- then, epitaxially growing a second layer of group III-nitride semiconductor on the first layer under growth conditions that cause the growth surface to become smooth;
- and
- wherein the act of epitaxially growing a first layer includes growing the first layer with an epitaxy gas mixture in which a ratio of atoms of metal to atoms of nitrogen is less than one.
2 more elements
A method, comprising:
- epitaxially growing a first layer of group III-nitride semiconductor with an epitaxy gas mixture that includes group III-metal atoms and nitrogen, the gas mixture having a value for the ratio of atoms of group III-metal to atoms of nitrogen that is less than one;
- and
- then, epitaxially growing a second layer of group III-nitride semiconductor on the first layer under growth conditions that include an increased flow of group III-metal atoms in the epitaxy gas mixture by at least 20 percent.
A method, comprising:
- epitaxially growing a first layer of group III-nitride semiconductor with an epitaxy gas mixture that includes group III-metal atoms and nitrogen, the gas mixture having a value for the ratio of atoms of group III-metal to atoms of nitrogen that is less than one;
- then, epitaxially growing a second layer of group III-nitride semiconductor on the first layer under growth conditions that include an increased flow of group III-metal atoms in the epitaxy gas mixture by at least 20 percent;
- epitaxially growing another layer of a group III-nitride semiconductor adjacent the second layer to produce a vertical electronic device, wherein the another layer has a different conductivity type than the first layer;
- and
- forming a contact layer configured to one of apply a bias voltage across the another layer and drive a current through the layers.
2 more elements
Dependencies are inferred from the claim text.