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US 7,001,805 B2Granted
Method for fabricating n-type carbon nanotube device
AssigneeIndustrial Technology Research Institute
InventorsHung-Hsiang Wang, Jeng-Hua Wei, Ming-Jer Kao
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Abstract
A method for fabricating an n-type carbon nanotube device, characterized in that thermal annealing and plasma-enhanced chemical vapor-phased deposition (PECVD) are employed to form a non-oxide gate layer on a carbon nanotube device. Moreover, the inherently p-type carbon nanotube can be used to fabricate an n-type carbon nanotube device with reliable device characteristics and high manufacturing compatibility.
Claims6
A method for fabricating an n-type carbon nanotube device, comprising steps of:
- depositing an oxide film on a substrate;
- forming a first metal film on said oxide film;
- forming a carbon nanotube layer on said first metal film;
- depositing a gate layer covering said first metal film and said carbon nanotube layer;
- and
- forming a gate electrode on said gate layer,
- wherein said gate layer is formed of a non-oxide material by using plasma-enhanced chemical vapor-phased deposition (PECVD).
4 more elements
Dependencies are inferred from the claim text.