Thin film transistor with multiple gates using metal induced lateral crystalization and method of fabricating the same

A method of fabricating a thin film transistor with multiple gates using an MILC process comprising:

• forming an amorphous silicon film in a zigzag shape on an insulating substrate;
• forming a gate insulating film on the front surface of the insulating substrate;
• forming a gate electrode on the gate insulating film so that the gate electrode intersects with the amorphous silicon film;
• forming over the front surface of the insulating substrate an interlayer insulating film equipped with contact holes exposing edges of both sides of the amorphous silicon film;
• forming a metal layer contacting an exposed part of the amorphous silicon film through the contact holes;
• forming a semiconductor layer comprising a polycrystalline silicon film by crystallizing the amorphous silicon film using the MILC process;
• and
• forming source/drain electrodes contacting the semiconductor layers through the contact holes.