Semiconductor device and method for fabricating the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKazufumi Yamaya, Koji Shimomura
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Abstract
On a substrate provided with a transistor, an electrode pad for product connected electrically to the transistor is formed. A metal bump is provided on a surface of the electrode pad for product. An electrode pad for test to be used specifically for a wafer-level burn-in, which is connected electrically to the transistor, is further formed on the substrate.
Claims4
A wafer-level burn-in method for performing a burn-in with respect to a semiconductor wafer provided with a plurality of semiconductor integrated circuit chips each having a transistor, an electrode for product connected electrically to the transistor and having a metal bump provided on a surface thereof, and an electrode pad for test connected electrically to the transistor to be used specifically for a wafer-level burn-in, the method comprising the steps of:
- performing a probe test on the plurality of semiconductor integrated circuit chips by using the electrode pad for product;
- performing an insulating treatment with respect to the electrode pad for test of the faulty one of the plurality of semiconductor integrated circuit chips determined to be faulty in the step of performing the probe test;
- and
- after the step of performing the insulating treatment, performing a wafer-level burn-in using the electrode pad for test with respect to the good one of the plurality of semiconductor integrated circuit chips determined to be good in the step of performing the probe test.
Dependencies are inferred from the claim text.