Method to control spacer width
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJyh-Shiou Hsu, Pin-Yi Hsin, Jeng Yu
Life of this patent
Estimating the term…
Abstract
A method of fabricating final spacers having a target width comprises the following steps. Initial spacers, each having an initial width that is less than the target width, are formed over the opposing side walls of a gate electrode portion. The difference between the initial spacer width and the target width is determined. A second spacer layer having a thickness equal to the determined difference between the initial width of the initial spacers and the target width is formed upon the initial spacers and the structure. The second spacer layer is etched to leave second spacer layer portions extending from the initial spacers to form the final spacers.
Claims39
A method of fabricating final spacers each having a target width, comprising the steps of:
- providing a structure having a gate electrode portion formed thereover;
- the gate electrode portion having a top and opposing side walls;
- forming initial spacers over the opposing side walls of the gate electrode portion;
- the initial spacers each having an initial width that is less than the target width, the initial width and the target width being defined by the initial spacers and the final spacers extending along the structure away from the gate electrode portion, respectively;
- determining the difference between the initial width of the initial spacers and the target width;
- forming a second spacerlayer upon the initial spacers and the structure, the second spacer layer having a thickness that is equal to the determined difference between the initial width of the initial spacers and the target width;
- and
- etching at least the second spacer layer from over the initial spacers and the structure leaving second spacer layer portions extending from the initial spacers along the structure forming the final spacers.
A method of fabricating final spacers each having a target width, comprising the steps of:
- providing a structure having a gate electrode portion formed there over;
- the gate electrode portion having a top and opposing side walls;
- forming initial spacers over the opposing side walls of the gate electrode portion;
- the initial spacers each having an initial width that is less than the target width, the initial width and the target width being defined by the initial spacers and the final spacers extending along the structure away from the gate electrode portion, respectively;
- determining the difference between the initial width of the initial spacers and the target width;
- forming a second spacer layer upon the initial spacers and the structure, the second spacer layer having a thickness that is equal to the determined difference between the initial width of the initial spacers and the target width;
- and
- etching at least the second spacer layer from over the initial spacers and the structure leaving second spacer layer portions extending from the initial spacers along the structure forming the final spacers;
- wherein the second spacer layer portions each having a width that is substantially equal to the thickness of the second spacer layer;
- the width of the second spacer layer portions plus the initial width of the initial spacers being equal to the target width.
A method of fabricating final spacers each having a target width, comprising the steps of:
- providing a structure having a gate electrode portion formed there over;
- the gate electrode portion having a top and opposing side walls;
- the gate electrode portion being comprised of polysilicon;
- forming initial spacers over the opposing side walls of the gate electrode portion;
- the initial spacers each having an initial width that is less than the target width;
- the initial spacers being comprised of SiN;
- determining the difference between the initial width of the initial spacers and the target width;
- forming a second spacer layer upon the initial spacers and the structure, the second spacer layer having a thickness that is equal to the determined difference between the initial width of the initial spacers and the target width;
- the second spacer layer being comprised of SiN;
- and
- etching at least the second spacer layer from over the initial spacers and the structure to leave second spacer layer portions extending from the initial spacers to form the final spacers;
- wherein the second spacer layer portions each having a width that is substantially equal to the thickness of the second spacer layer;
- the width of the second spacer layer portions plus the initial width of the initial spacers being equal to the target width.
Dependencies are inferred from the claim text.