Method of manufacturing a magnetic tunnel junction device
AssigneeKoninklijke Philips Electronics N.V.
InventorsDerk Jan Adelerhof, Reinder Coehoorn, Joannes Baptist Adrianus Dionisius Van Zon
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a magnetic tunnel junction device, in which a stack (1) comprising two magnetic layers (3, 7) and a barrier layer (5) extending in between is formed. One of the magnetic layers is structured by means of etching, in which, during etching, a part of this layer is made thinner by removing material until a rest layer (7r) remains. This rest layer is passivated by chemical conversion. In the relevant method, it is prevented that the magnetic layer which is not to be structured is detrimentally influenced during structuring of the other magnetic layer.
Claims7
A method of manufacturing a magnetic tunnel junction device, in which a stack comprising two magnetic layers and a barrier layer extending in between is formed, one of the magnetic layers is structured by etching, in which, during etching, a part of the structured layer is thinned by removing material to provide a rest layer, whereafter the electrical resistance of the rest layer is increased by chemical conversion effected by oxidation and/or nitridation.
Dependencies are inferred from the claim text.