Patterning method using a photomask
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorAkio Misaka
Life of this patent
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Abstract
An isolated light-shielding pattern formed from a light-shielding film region 101 and a phase shift region 102 is formed on a transparent substrate 100 serving as a mask. The phase shift region 102 has a phase difference with respect to a light-transmitting region of the transparent substrate 100. Moreover, the width of the phase shift region 102 is set such that a light-shielding property of the phase shift region 102 becomes at least about the same as that of a light-shielding film having the same width.
Claims27
A patterning method using a photomask, characterized in that it comprises the steps of:
- forming a resist film on a substrate;
- conducting pattern exposure to the resist film using the photomask;
- and
- developing the resist film subjected to the pattern exposure so as to form a resist pattern,
- wherein the photomask includes an isolated light-shielding pattern formed on a transparent substrate that is transparent to an exposure light, and is characterized in that
- the light-shielding pattern is formed from a light-shielding film region formed from a light-shielding film, and a phase shift region having an opposite phase with respect to a light-transmitting region of the transparent substrate which has no light-shielding pattern,
- the light-shielding pattern includes at least a first light-shielding pattern having a first width and a second light-shielding pattern having a second width larger than the first width,
- a first phase shift region, which is part of the phase shift region and is surrounded by the light-shielding film region, is provided in a portion of the first light-shielding pattern, and
- only the light-shielding film region is provided in the second light-shielding pattern.
A patterning method using a photomask, characterized in that it comprises the steps of:
- forming a resist film on a substrate;
- conducting pattern exposure to the resist film using the photomask;
- and
- developing the resist film subjected to the pattern exposure so as to form a resist pattern,
- wherein the photomask includes an isolated light-shielding pattern formed on a transparent substrate that is transparent to an exposure light, and is characterized in that
- the light-shielding pattern is formed from a light-shielding film region formed from a light-shielding film, and a phase shift region having an opposite phase with respect to a light-transmitting region of the transparent substrate which has no light-shielding pattern,
- the light-shielding pattern includes a first light-shielding pattern having a width Lm equal to or smaller than 0.18×M, where the unit is μm:
- M is a magnification of the reduction projection optical system of an aligner,
- a first phase shift region, which is part of the phase shift region and is surrounded by the light-shielding film region, is provided in a portion of the first light-shielding pattern.
Dependencies are inferred from the claim text.