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US 7,001,696 B2Granted
Near-field light exposure mask with avoidance of overlap of near-field light, method for manufacturing the same, exposure apparatus and method using near-field light exposure mask, and method for manufacturing device
AssigneeCanon Kabushiki Kaisha
InventorsYasuhisa Inao, Ryo Kuroda
Life of this patent
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Abstract
A near-field light exposure mask provided with a plurality of apertures each having a width smaller than the wavelength of light used for exposure. In the mask described above, among the plurality of apertures, apertures adjacent to each other are disposed at a necessary distance so that near-field light effused from one of the apertures adjacent to each other does not overlap that generated from the other aperture.
Claims20
A near-field light exposure mask comprising:
- a plurality of apertures, each having a width smaller than the wavelength of light used for exposure,
- wherein, among said plurality of apertures, apertures adjacent to each other are disposed at a predetermined distance so that near-field light generated from one of said apertures adjacent to each other does not overlap that generated from the other aperture of said apertures adjacent to each other, and
- wherein, for each of said plurality of apertures, the width of the aperture is at most 50% of the sum of (a) the width of the aperture and (b) the distance between said apertures adjacent to each other.
A mask comprising:
- a film having formed therein a plurality of apertures including a first aperture having a width X and a second aperture having a width X separated by a distance D,
- wherein X is smaller than the wavelength of light used for exposure, and
- wherein the following condition is satisfied:
- X≦(X+D)/2.
1 more element
Dependencies are inferred from the claim text.