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US 7,001,692 B2Granted
Method of forming a mask having nitride film
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Un Kwean, Jae-Seung Hwang
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Abstract
A method of forming a mask comprises forming a mask layer including nitrogen, forming a photoresist pattern on the mask layer and etching the mask layer using a mixes gas including a first gas adapted for etching the mask layer and a second gas for increasing selectivity of the photoresist pattern, thereby forming a hard mask. In this manner, selectivity of the photoresist is improved while a high etching ratio of the nitride layer is maintained when forming a hard mask.
Claims37
A method of forming a mask, comprising:
- forming a mask layer comprising nitrogen;
- forming a photoresist pattern on the mask layer;
- and
- simultaneously etching the mask layer and increasing the selectivity of the photoresist pattern by treating the mask layer with a gas mixture containing both a first gas and a second gas, wherein the first gas has the general chemical formula CHmFn, wherein m and n are one of 1, 2, and 3, and the second gas has the general chemical formula CxFy where x and y are selected such that a ratio of x/y is 0.5 or greater, thereby forming a hard mask.
1 more element
A method of forming a mask, comprising:
- forming a first layer comprising nitride on a substrate;
- forming a second layer comprising oxide on the substrate;
- and
- simultaneously etching in situ the first layer and the second layer and quickening the etching of the first layer by treating the first layer and the second layer with a gas mixture containing both a first gas and a second gas, the first gas adapted for etching the first layer and the second layer, and the second gas for quickening the etching of the first layer.
1 more element
A method of forming a mask, comprising:
- forming a mask layer comprising a multi-layered structure including a nitride layer and an oxide layer;
- forming a photoresist pattern on the mask layer;
- and
- simultaneously etching in situ both the nitride layer and the oxide layer of the multi-layered mask layer and increasing the selectivity of the photoresist pattern by treating the mask layer with a gas mixture containing both a first gas and a second gas, the first gas adapted for etching the mask layer and the second gas adapted for increasing the selectivity of the photoresist pattern, thereby forming a hard mask.
1 more element
Dependencies are inferred from the claim text.