Apparatus and method for manufacturing semiconductor grains
AssigneeKYOCERA Corporation
InventorsNobuyuki Kitahara, Toshio Suzuki, Noboru Suda, Shin Sugawara, Hisao Arimune
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Abstract
A crucible is formed of a cylindrical body member and a disk-shaped nozzle member fitted to the bottom portion of the body member, and the nozzle member is provided with a nozzle hole for discharging out a semiconductor molten solution dropwise therethrough. The semiconductor molten solution drops discharged out of the crucible through the nozzle hole are cooled and solidified during falling to become semiconductor grains. Silicon grains having high crystal quality can be manufactured at low cost.
Claims13
A method for manufacturing semiconductor grains comprising steps of filling a semiconductor molten solution into a crucible having a cylindrical body member and a disk-shaped nozzle member detachably fitted to the bottom portion of the body member, applying a pressure to the semiconductor molten solution in the crucible, discharging out dropwise the semiconductor molten solution through a nozzle hole provided in the nozzle member, allowing the semiconductor molten solution to fall to cool and solidify the semiconductor molten solution during falling.
A method for manufacturing semiconductor grains comprising steps of adding grains acting as cores of crystal to a semiconductor material, filling a semiconductor molten material of the semiconductor material into a crucible, discharging out the semiconductor molten solution dropwise through a nozzle hole provided in the crucible to allow the semiconductor molten material to fall, and cooling and solidifying the molten material during falling,
- wherein the grains acting as cores of crystal are formed of one or two selected from the group consisting of silicon carbide, aluminum oxide, silicon oxide, diamond and graphite.
A method for manufacturing semiconductor grains comprising steps of feeding a semiconductor molten material into a crucible, discharging out dropswise the semiconductor molten solution through a nozzle hole provided in the crucible to allow the semiconductor molten material to fall in an atmosphere containing oxygen, and cooling and solidifying the molten material during falling to form semiconductor grains,
- wherein the oxygen concentration of the resultant semiconductor grains is less than 2×1018 atoms/cm3.
A method for manufacturing semiconductor grains comprising steps of feeding a semiconductor molten material into a crucible, discharging out dropwise the semiconductor molten solution through a nozzle hole provided in the crucible to allow the semiconductor molten material to fall in an atmosphere containing oxygen, and cooling and solidifying the molten material during falling to form semiconductor grains,
- wherein the oxygen concentration of the atmosphere is not less than 0.05 atom % and not more than 50 atom %.
Dependencies are inferred from the claim text.