Semiconductor element and its manufacturing method
AssigneeCanon Kabushiki Kaisha
InventorsKeishi Saito, Masafumi Sano
Life of this patent
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Abstract
In a semiconductor element comprising microcrystalline semiconductor, a semiconductor junction is provided within a microcrystal grain. Further, in a semiconductor element comprising microcrystalline semiconductor, microcrystal grains of different grain diameters are provided as a mixture to form a semiconductor layer. Thereby, discontinuity of a semiconductor junction is lessened to thereby improve the characteristics, durability, and heat resisting properties of a semiconductor element. Distortion in a semiconductor layer is also reduced.
Claims5
A method of manufacturing a semiconductor element, comprising the steps of:
- forming a semiconductor layer having first electric characteristics on a substrate;
- crystallizing the semiconductor layer having the first electric characteristics;
- and
- growing a crystalline semiconductor layer having second electric characteristics on the crystallized semiconductor layer having the first electric characteristics, thereby growing a microcrystal grain so as to extend over the semiconductor layer having the first electric characteristics and the semiconductor layer having the second electric characteristics.
A method of manufacturing a semiconductor element, comprising the steps of:
- forming a crystalline semiconductor layer having first electric characteristics on a substrate;
- and
- growing a crystalline semiconductor layer having second electric characteristics on the semiconductor layer having the first electric characteristics, thereby growing a microcrystal grain so as to extend over the semiconductor layer having the first electric characteristics and the semiconductor layer having the second electric characteristics.
A method of manufacturing a semiconductor element, comprising the steps of:
- forming a semiconductor layer having first electric characteristics on a substrate;
- growing a semiconductor layer having second electric characteristics on the semiconductor layer having the first electric characteristics;
- and
- effecting annealing to form a microcrystal grain so as to extend over the semiconductor layer having the first electric characteristics and the semiconductor layer having the second electric characteristics.
A method of manufacturing a semiconductor element, comprising the step of generating a plasma in a gas phase to decompose a source gas thus forming a semiconductor layer comprising microcrystals on a substrate, wherein an electric power to be applied to the plasma is periodically changed to form a semiconductor layer comprising microcrystal grains of different sizes as a mixture.
A method of manufacturing a semiconductor element, comprising the step of generating a plasma in a gas phase to decompose a source gas thus forming a semiconductor layer comprising microcrystals on a substrate, wherein a halogen-containing gas is added at regular intervals into the source gas to form a semiconductor layer comprising microcrystal grains of different sizes as a mixture.
Dependencies are inferred from the claim text.