Semiconductor light-emitting device
AssigneeSanyo Electric Co., Ltd.
InventorMasayuki Hata
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Abstract
A semiconductor light-emitting device capable of attaining a surface plasmon effect while attaining excellent ohmic contact is provided. This semiconductor light-emitting device comprises a semiconductor layer formed on an emission layer, a first electrode layer formed on the semiconductor layer and a second electrode layer, formed on the first electrode layer, having a periodic structure. The first electrode layer is superior to the second electrode layer in ohmic contact with respect to the semiconductor layer, and the second electrode layer contains a metal exhibiting a higher plasma frequency than the first electrode layer.
Claims20
A semiconductor light-emitting device comprising:
- a semiconductor layer formed on an emission layer;
- a first electrode layer formed on said semiconductor layer;
- and
- a second electrode layer, formed on said first electrode layer, having a periodic structure, wherein
- said first electrode layer is superior to said second electrode layer in ohmic contact with respect to said semiconductor layer, and
- said second electrode layer contains a metal exhibiting a higher plasma frequency than said first electrode layer.
Dependencies are inferred from the claim text.