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US 6,998,639 B2Granted
Method for manufacturing a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang
Life of this patent
Estimating the term…
Abstract
A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.
Claims20
A thin film transistor comprising:
- a semiconductor film comprising crystalline silicon on an insulating surface;
- a channel region comprising at least one silicon crystal formed in the semiconductor film;
- source and drain regions in the semiconductor film with the channel region therebetween;
- a gate electrode adjacent to the channel region,
- wherein said silicon crystal has a [111] axis approximately parallel with said insulating surface.
2 more elements
A thin film transistor comprising:
- a semiconductor film comprising crystalline silicon on an insulating surface;
- a channel region comprising at least one silicon crystal formed in the semiconductor film wherein said silicon crystal extends in parallel with the insulating surface;
- source and drain regions in the semiconductor film with the channel region therebetween;
- a gate electrode adjacent to the channel region,
- wherein said silicon crystal has a [111] axis approximately parallel with said insulating surface.
2 more elements
A thin film transistor comprising:
- a semiconductor film comprising crystalline silicon on an insulating surface;
- a channel region comprising at least one silicon crystal formed in the semiconductor film;
- source and drain regions in the semiconductor film with the channel region therebetween;
- a gate electrode adjacent to the channel region,
- wherein said silicon crystal has a [111] axis approximately parallel with said insulating surface, and
- wherein said silicon crystal has at least one of {110}, {123}, {134}, {235}, {145}, {156}, {257} and {167}planes.
3 more elements
A thin film transistor comprising:
- a semiconductor film comprising crystalline silicon on an insulating surface;
- a channel region comprising at least one silicon crystal formed in the semiconductor film wherein said silicon crystal extends in parallel with the insulating surface;
- source and drain regions in the semiconductor film with the channel region therebetween;
- a gate electrode adjacent to the channel region,
- wherein said silicon crystal has a [111] axis approximately parallel with said insulating surface, and
- wherein said silicon crystal has at least one of {110}, {123}, {134}, {235}, {145}, {156}, {257} and {167}planes.
3 more elements
Dependencies are inferred from the claim text.