Scanning systems and methods for providing ions from an ion beam to a workpiece
AssigneeAxcelis Technologies, Inc.
InventorsJoseph Ferrara, Michael A. Graf, Bo H. Vanderberg
Life of this patent
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Abstract
Ion implantation scanning systems and methods are presented for providing ions from an ion beam to a treatment surface of a workpiece, wherein a beam is electrically or magnetically scanned in a single direction or plane and an implanted workpiece is rotated about an axis that is at a non-zero angle relative to the beam scan plane, where the workpiece rotation and the beam scanning are synchronized to provide the beam to the workpiece treatment surface at a generally constant angle of incidence.
Claims26
An ion implantation system, comprising:
- an ion source operable to produce an ion beam;
- a beam scanner adapted to scan the ion beam substantially in a single beam scan plane to provide a scanned ion beam to a workpiece location in a process chamber;
- and
- a workpiece scanning system located downstream of the beam scanner, the workpiece scanning system being adapted to rotate at least one workpiece at the workpiece location in the process chamber about a first axis that is at a non-zero first angle relative to the beam scan plane, and to translate the at least one workpiece in a workpiece scan direction that is at a non-zero second angle relative to the beam scan plane.
A scanning system for providing ions from an ion beam to a workpiece, the scanning system comprising:
- a beam scanner receiving an ion beam and scanning the ion beam substantially in a single beam scan plane to provide a scanned ion beam to a workpiece location in a process chamber;
- and
- a workpiece scanning system located downstream of the beam scanner, the workpiece scanning system being adapted to rotate at least one workpiece at the workpiece location in the process chamber about a first axis that is at a non-zero first angle relative to the beam scan plane, and to translate the at least one workpiece in a workpiece scan direction that is at a non-zero second angle relative to the beam scan plane.
A method of implanting a workpiece with ions from an ion beam, the method comprising:
- providing an ion beam;
- supporting a workpiece at a workpiece location in a process chamber;
- scanning the ion beam substantially in a single beam scan plane to provide a scanned ion beam to the workpiece location;
- rotating the workpiece about a first axis that is at a non-zero first angle relative to the beam scan plane;
- and
- translating the workpiece in a workpiece scan direction that is at a non-zero second angle relative to the beam scan plane.
Dependencies are inferred from the claim text.