Ion beam measurement systems and methods for ion implant dose and uniformity control
AssigneeAxcelis Technologies, Inc.
InventorsKlaus Petry, Joseph Ferrara, Klaus Becker
Life of this patent
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Abstract
Dosimetry systems and methods are also presented for measuring a scanned ion beam at a plurality of points along a curvilinear path at a workpiece location in a process chamber. An illustrated dosimetry system comprises a sensor and a mounting apparatus that supports support the sensor and selectively positions the sensor at a plurality of points along the curvilinear path, wherein the mounting apparatus can selectively position the sensor to point toward a vertex of the scanned ion beam.
Claims37
An ion implantation system, comprising:
- an ion source operable to produce an ion beam;
- a beam scanner located downstream from the ion source, the beam scanner receiving the ion beam and directing a scanned ion beam toward a workpiece location in a process chamber;
- and
- a dosimetry system operable to measure the scanned beam at a plurality of points along a curvilinear path at the workpiece location.
A dosimetry system for measuring a scanned beam in a process chamber, the dosimetry system comprising:
- a sensor comprising an entrance aperture, the sensor being adapted to receive ions at the entrance aperture and to provide a signal indicative of an amount of received ions;
- and
- a mounting apparatus adapted to support the sensor and to selectively position the sensor at a plurality of points along a curvilinear path at a workpiece location of the process chamber.
A method of measuring a scanned beam in a process chamber, the method comprising:
- directing a scanned ion beam toward a workpiece location in a process chamber;
- and
- measuring the scanned beam at a plurality of points along a curvilinear path at the workpiece location.
Dependencies are inferred from the claim text.