Back to results
US 6,979,370 B2Granted
Methods, complexes, and system for forming metal-containing films
AssigneeMicron Technology, Inc.
InventorBrian A. Vaartstra
Life of this patent
Estimating the term…
Abstract
A method of forming a film on a substrate using Group IIIA metal complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
Claims4
A chemical vapor deposition system comprising:
- a deposition chamber having a substrate positioned there;
- a vessel containing a precursor comprising one or more hydride complexes of the formulas:
- wherein:
- M is a Group IIIA metal;
- each R1, R2, R3, R4, and R5 group is independently H or a (C1–C30)organic group,
- wherein none of the R groups are joined together to form ring systems, at least one of R3 and R4 is H, and R5 is H;
- and
- n=1 to 6;
- and
- a source of an inert carrier gas for transferring the complex or complexes to the chemical vapor deposition chamber.
7 more elements
A chemical vapor deposition system comprising:
- a deposition chamber having a substrate positioned therein;
- a vessel containing a liquid precursor comprising one or more hydride complexes of the formulas:
- wherein:
- M is a Group IIIA metal;
- each R1, R2, R3, R4, and R5 group is independently H or a (C1–C30)organic group,
- wherein none of the R groups are joined together to form ring systems, at least one of R3 and R4 is H, and R5 is H;
- and
- n=1 to 6;
- and
- a source of an inert carrier gas for transferring the complex or complexes to the chemical vapor deposition chamber.
7 more elements
A chemical vapor deposition system comprising:
- a deposition chamber having a semiconductor substrate positioned therein;
- a vessel containing a precursor comprising one or more hydride complexes of the formulas:
- wherein:
- M is a Group IIIA metal;
- each R1, R2, R3, R4, and R5 group is independently H or a (C1–C30)organic group,
- wherein none of the R groups are joined together to form ring systems, at least one of R3 and R4 is H, and R5 is H;
- and
- n=1 to 6;
- and
- a source of an inert carrier gas for transferring the complex or complexes to the chemical vapor deposition chamber.
7 more elements
A chemical vapor deposition system comprising:
- a deposition chamber having a semiconductor substrate positioned therein;
- a vessel containing a liquid precursor comprising one or more hydride complexes of the formulas:
- wherein:
- M is a Group IIIA metal;
- each R1, R2, R3, R4, and R5 group is independently H or a (C1–C30) organic group,
- wherein none of the R groups are joined together to form ring systems, at least one of R3 and R4 is H, and R5 is H;
- and
- n=1 to 6;
- and
- a source of an inert carrier gas for transferring the complex or complexes to the chemical vapor deposition chamber.
7 more elements
Dependencies are inferred from the claim text.