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US 6,977,397 B2Granted
Light emitting element and method of making same
AssigneeKoha Co., Ltd.
InventorsNoboru Ichinose, Kiyoshi Shimamura, Yukio Kaneko, Encarnacion Antonia Garcia Villora, Kazuo Aoki
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Abstract
A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1−X−Y))2O3 where 0≦x≦1, 0≦y≦1 and 0≦x+y≦1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.
Claims5
A light emitting element, comprising;
- a Ga2O3 single crystal substrate;
- a pn-junction formed on the substrate, the pn-junction including a first GaN system compound semiconductor thin film of first conductivity type formed on the substrate of the first conductivity type, and a second GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type, the second GaN system compound semiconductor thin film being formed on the first GaN system compound semiconductor thin film.
Dependencies are inferred from the claim text.