Method for measuring the intensity profile of an electron beam, in particular a beam of an electron-beam machining device, and/or for measuring an optical system for an electron beam and/or for adjusting an optical system for an electron beam, measuring structure for such a method and electron-beam machining device
AssigneePro-Beam AG & Co. KGAA
InventorThorsten Löwer
Life of this patent
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Abstract
To measure the intensity profile of an electron beam the electron beam is conducted on to a measuring structure having areas with different back-scattering properties, and back-scattered electrons which are produced by scanning of the measuring structure by the electron beam by means of a deflector unit are measured by a sensor ring. The measuring structure can preferably be installed into and removed from an electron-beam welder and consists of a graphite slab from which a tungsten needle projects perpendicularly.
Claims62
A method for measuring the intensity profile of an electron beam, in which the electron beam is directed by relative movement between the electron beam and a measuring structure on to different points of the latter which have different back-scattering properties, wherein a stream of electrons scattered in the reverse direction by the measuring structure is measured as a function of the relative movement of the electron beam and the measuring structure and wherein the measuring structure includes at least one opening, which allows the electron beam to pass through.
A method for measuring the intensity profile of an electron beam, in which the electron beam is directed by relative movement between the electron beam and a measuring structure on to different points of the latter which have different back-scattering properties, wherein a steam of electrons scattered in the reverse direction by the measuring structure is measured as a function of the relative movement of the electron beam and the measuring structure and wherein the measuring structure is formed by a needle, which includes at least one back-scattering surface which reflects the electron bean at least partially.
Method for measuring the intensity profile of an electron beam in which the electron beam is directed by relative movement between the electron beam and a measuring structure on to different points of the latter which have different back-scattering properties, wherein a stream of electrons scattered in the reverse direction by the measuring structure is measured as a function of the relative movement of the electron beam and the measuring structure and wherein the measuring structure is in the form of a grid, wherein at least a considerable portion of the grid is impinged upon by the electron beam through the relative movement between the electron beam and the measuring structure, wherein the stream of back-scattered electrons as a function of the relative movement is converted into an image of the measuring structure and this image is compared to a reference image of the measuring structure as obtained by means of a correctly functioning optical system for an electron beam.
Dependencies are inferred from the claim text.