US 6,967,353 B2 · Semiconductor light emitting device and fabrication method thereof

Abstract

A semiconductor light emitting device includes a crystal layer formed on a substrate, the crystal layer having a tilt crystal plane tilted from the principal plane of the substrate, and a first conductive type layer, an active layer, and a second conductive type layer, which are formed on the crystal layer in such a manner as to extend within planes parallel to the tilt crystal plane, wherein the device has a shape formed by removing the apex and its vicinity of the stacked layer structure formed on the substrate. Such a semiconductor light emitting device is excellent in luminous efficiency even if the device has a three-dimensional device structure. The present invention also provides a method of fabricating the above semiconductor light emitting device.

Claims11

Dependent claims

A semiconductor light emitting device comprising:

a crystal layer formed on a substrate, said crystal layer having a tilt crystal plane tilted from the principal plane of said substrate;
and
a first conductive type layer, an active layer, and a second conductive type layer, which are formed on said crystal layer in such a manner as to extend within planes parallel to said tilt crystal plane;
wherein said device has a shape formed by removing an apex and its vicinity, the apex including portions of the first conductive type layer, the active layer, the second conductive type layer, and said crystal layer structure formed on said substrate, and wherein the apex is removed such that there remains a substantially planar surface that is generally parallel to the substrate.

1 more element

Dependencies are inferred from the claim text.

Semiconductor light emitting device and fabrication method thereof

Life of this patent

Semiconductor light emitting device and fabrication method thereof

Life of this patent

Abstract

Claims11