Multi-layer conductive memory device
AssigneeUnity Semiconductor Corporation
InventorsWayne Kinney, Steven W. Longcor, Darrell Rinerson, Steve Kuo-Ren Hsia
Life of this patent
Estimating the term…
Abstract
A multilayered conductive memory device capable of storing information individually or as part of an array of memory devices is provided. Boundary control issues at the interface between layers of the device due to the use of incompatible materials can be avoided by intentionally doping the conductive metal oxide layers that are comprised of substantially similar materials. Methods of manufacture are also provided herein.
Claims45
A conductive memory device capable of storing information comprising:
- a first electrode;
- a first conductive metal oxide layer stacked upon and in electrical communication with the first electrode;
- a second conductive metal oxide layer stacked upon and in electrical communication with the hint conductive metal oxide layer;
- a third conductive metal oxide layer stacked upon and in electrical communication with the second conductive metal oxide layer;
- and
- a second electrode stacked upon and in electrical communication with the third conductive metal oxide layer, wherein the conductive memory device has a resistance that is indicative of the information stored therein;
- wherein at least two of the first, second, and third conductive metal oxide layers comprise conductive metal oxides that are not identical to each other.
A conductive memory device capable of storing information comprising:
- a first electrode;
- a first conductive metal oxide layer stacked upon and in electrical communication with the first electrode;
- a second conductive metal oxide layer stacked upon and in electrical communication with the first conductive metal oxide layer;
- a second electrode stacked upon and in electrical communication with the second conductive metal oxide layer;
- wherein the conductive memory device has a resistivity that is indicative of the information stored therein;
- wherein at least one conductive metal oxide layer is doped with a dopant.
A method of manufacturing a conductive memory device comprising:
- depositing a bottom electrode;
- depositing a bottom conductive metal oxide layer onto the bottom electrode;
- depositing onto the bottom conductive metal oxide layer a top conductive metal oxide layer such that the top conductive metal oxide layer is in electrical communication with the bottom conductive metal oxide layer;
- depositing a top electrode onto the top conductive metal oxide layer;
- wherein either the top conductive metal oxide layer or the bottom conductive metal oxide layer or both is doped with a dopant;
- and
- wherein the resistance of the conductive memory can be modified during operation to store information.
Dependencies are inferred from the claim text.