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US 6,960,781 B2Granted
Shallow trench isolation process
AssigneeAmberWave Systems Corporation
InventorsMatthew T. Currie, Anthony J. Lochtefeld
Life of this patent
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Abstract
A structure including a transistor and a trench structure, with the trench structure inducing only a portion of the strain in a channel region of the transistor.
Claims40
A structure comprising:
- a substrate;
- a first transistor disposed over a first region of the substrate, the first transistor including:
- a first source region and a first drain region disposed in a first portion of the substrate,
- a first channel region disposed between the first source region and the first drain region, the first channel region having a first type of strain, and
- a first gate disposed above the first channel region and between the first source and first drain regions, the first gate comprising a material selected from the group consisting of a doped semiconductor, a metal, and a metallic compound;
- and
- a first trench structure disposed in a trench, wherein the trench is proximate at least one side of one of the first source region and the first drain region, the first trench structure inducing only a portion of the first type of strain in the first channel region.
4 more elements
A method for forming a semiconductor structure, the method comprising:
- providing a substrate;
- forming a first transistor over a first region of the substrate by:
- defining a first source region and a first drain region in a first portion of the substrate,
- defining a first channel region between the first source region and the first drain region, the first channel region having a first type of strain, and
- forming a first gate above the first channel region and between the first source and first drain regions, the first gate comprising a material selected from the group consisting of a doped semiconductor, a metal, and a metallic compound;
- forming a first trench proximate at least one side of one of the first source region and the first drain region;
- and
- forming a first trench structure in the first trench, the first trench structure tailored to induce only a portion of the first type of strain in the first channel region.
5 more elements
Dependencies are inferred from the claim text.