Incorporation of nitrogen into high k dielectric film
AssigneeASM America, Inc.
InventorsEric J. Shero, Christophe Pomarede
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Abstract
A high k dielectric film and methods for forming the same are disclosed. The high k material includes two peaks of impurity concentration, particularly nitrogen, such as at a lower interface and upper interface, making the layer particularly suitable for transistor gate dielectric applications. The methods of formation include low temperature processes, particularly CVD using a remote plasma generator and atomic layer deposition using selective incorporation of nitrogen in the cyclic process. Advantageously, nitrogen levels are tailored during the deposition process and temperatures are low enough to avoid interdiffusion and allow maintenance of the desired impurity profile.
Claims16
A method of forming a dielectric layer with a controlled variation in nitrogen concentration through its thickness, comprising:
- depositing the dielectric material onto a substrate at a substrate temperature less than about 500° C.;
- and
- varying a supply of nitrogen to the substrate during deposition of the dielectric material, wherein varying the supply of nitrogen produces two separate nitrogen peaks at interfaces with a lower nitrogen concentration in a bulk material therebetween.
A method of forming a dielectric layer with a controlled variation in nitrogen concentration through its thickness, comprising:
- depositing the dielectric material onto a substrate at a substrate temperature less than about 500° C.;
- and
- varying a supply of nitrogen to the substrate during deposition of the dielectric material, wherein depositing comprises a plurality of atomic layer deposition cycles, each cycle comprising:
- providing a metal pulse of a metal source gas;
- removing excess metal source gas and byproduct from the metal pulse;
- providing an oxidant pulse of oxygen source gas;
- and
- removing excess oxygen source gas and byproduct from the oxidant pulse.
A method of forming a dielectric layer with a controlled variation in nitrogen concentration through its thickness, comprising:
- depositing the dielectric material onto a substrate at a substrate temperature less than about 500° C;
- and
- varying a supply of nitrogen to the substrate during deposition of the dielectric material, wherein
- depositing the dielectric material comprises supplying a metal source simultaneously with supplying an oxidant source to the substrate;
- and
- varying a supply of nitrogen comprises supplying varying amounts of nitrogen excited species through a remote plasma generator.
Dependencies are inferred from the claim text.