A semiconductor device comprising device parameters that are determined based on potential, carrier density and carrier flow density, said potential, said carrier density and said carrier flow being calculated by a semiconductor device simulation method which divides said semiconductor device of a two-dimensional structure or three-dimensional structure into meshes and solves physical equations including a potential equation and a carrier transport equation, for each of said meshes, and said semiconductor device simulation method calculating said potential, said carrier density and said carrier flow by applying separately a drift current resulting from an electric field and a diffusion current caused by a carrier density gradient.