LTCC fet mixer
OwnerDaxiong Jiinventor
Life of this patent
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Abstract
A wide bandwidth mixer has a low temperature co-fired ceramic substrate. The substrate has a top layer, a bottom layer and inner layers. Vias extend through the substrate. A local oscillator balun and an RF balun are located on the inner layers and connected to the vias. An intermediate frequency balun is mounted to the top layer and connected to the vias. Field effect transistors are mounted on the top layer and connected to the local oscillator balun, the RF balun and the intermediate frequency balun through the vias. A matching network is mounted to the top layer and is connected to the vias. The matching network matches the impedance of the field effect transistors to that at the LO port.
Claims28
A wide bandwidth mixer for mixing an RF input signal with a local oscillator signal to provide at an output an intermediate frequency signal, comprising:
- (a) a plurality of planar ceramic layers, the plurality of planar ceramic layers including a top layer, a bottom layer and inner layers;
- (b) a plurality of vias interconnecting the ceramic layers;
- (c) a plurality of circuit lines located on the ceramic layers and connected to the vias;
- (d) at least one field effect transistor mounted to the top layer and electrically connected to the vias;
- (e) at least one balun mounted on the inner layers and electrically connected to the vias;
- and
- (f) a transformer mounted to the top layer and electrically connected to the vias.
A wide bandwidth mixer comprising:
- (a) a planar substrate having a plurality of layers including a top layer, a bottom layer and inner layers;
- (b) a plurality of vias extending through the layers;
- (c) a first and a second balun located on two of the inner layers and electrically connected to the vias;
- (d) a semiconductor die mounted on the top layer and electrically connected to the first and second baluns through the vias;
- (e) a third balun mounted to the top layer and electrically connected to the semiconductor die;
- and
- (f) a matching network mounted to the top layer and electrically connected to the vias.
A wide bandwidth mixer comprising:
- (a) a planar substrate formed from a plurality of layers of fired low temperature co-fired ceramic, the substrate including a top layer, a bottom layer and inner layers;
- (b) a plurality of vias extending through the substrate;
- (c) a local oscillator balun and an RF balun located on the inner layers and electrically connected to the vias, the local oscillator balun adapted to receive a local oscillator signal, the RF balun adapted to receive an RF signal;
- (d) an intermediate frequency balun mounted to the top layer and electrically connected to the vias, the intermediate frequency balun adapted to provide an intermediate frequency signal;
- (e) a plurality of field effect transistors mounted on the top layer, the transistors electrically connected to the local oscillator balun, the RF balun and the intermediate frequency balun through the vias, the transistors mixing the local oscillator signal with the RF signal to provide the intermediate frequency signal;
- and
- (f) a matching network mounted to the top layer and electrically connected to the vias, the matching network matching the impedance of the field effect transistors to that at an LO port.
Dependencies are inferred from the claim text.