Apparatus for performing anastomosis

An optical projection system comprising:

• a laser source radiating coherent light;
• a projection mask to accept light from the laser source and transmit shaped light, the mask including:
• an opaque region;
• a transparent slit having:
• a width in the range of 10X to 50X micrometers, where X is a variable;
• and,
• a triangular-shaped slit end;
• and,
• an X:1 demagnification factor lens having an input to accept the shaped light and an output to supply demagnified light.

A substrate temperature-assisted lateral growth method for crystallizing a substrate, the method comprising:

• providing a silicon (Si) film overlying a substrate;
• heating a first Si film region to a predetermined minimum temperature;
• supplying coherent light;
• shaping the light using a projection mask having a slit width in the range of 10X to 50X micrometers, where X is a variable;
• demagnifying the shaped light by a factor of X;
• transmitting the demagnified light to a second region of the Si film, within the first region;
• and,
• crystallizing the second Si film region in response to the combination of the minimum substrate temperature and the demagnified light.

A method for crystallizing a silicon (Si) film, the method comprising:

• initially crystallizing a first length of Si, oriented in a first direction, with grain boundaries oriented substantially in a second direction, normal to the first direction;
• simultaneously crystallizing a triangular-shaped end of the first length of Si with grain boundaries oriented substantially in a third direction, approximately 45 degrees from the first and second directions.
• subsequently crystallizing a second length of Si, adjacent the triangular shaped end and oriented in the first direction, with grain boundaries oriented substantially in the second direction;
• and,
• simultaneously recrystallizing the triangular-shaped end with grain boundaries oriented substantially in the second direction.